Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T09:30:40.791Z Has data issue: false hasContentIssue false
  • English
  • Français

Advanced Dielectrics for Passivation of INSB

Published online by Cambridge University Press:  22 February 2011

J. C. Barbour ,
S. A. Casalnuovo  and
S. R. Kurtz
J. C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerquqe, NM 87185
S. A. Casalnuovo
Affiliation:
Sandia National Laboratories, Albuquerquqe, NM 87185
S. R. Kurtz
Affiliation:
Sandia National Laboratories, Albuquerquqe, NM 87185
Get access

Abstract

A combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiOx Ny on InSb at temperatures from 30°C to 250°C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (C-V) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si3ON2 on InSb, and sulfided layers capped with S3ON2 all exhibited good C-V properties consistent with interface state densities on the order of 1011/cm2-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si3N4 on InSb and the adhesion of Si3ON2 on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 613
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schmidt, K., Ryssei, H., Muller, H., Wiedeburg, K. H. and Betz, H., Thin Solid Films 16, S11 (1973).Google Scholar
[2] Korwin-Pawlowski, M. L. and Hesell, E. L., Phys. Stat. Solidi A 27, 339 (1975).Google Scholar
[3] Shikata, S., Okada, H., and Hayashi, H., J. Vac. Sci. Technol. B9, 2479 (1991).Google Scholar
[4] Dzioba, S., in Characterization of Plasma-Enhanced CVD Processes, edited by Lucovsky, G., Ibbotson, D. E., and Hess, D. W. (Materials Research Society, Pittsburgh, 1990), Vol. 165, pp. 91–100.Google Scholar
[5] Kepten, A., Shacham-Diamand, Y., and Schacham, S. E., J. Appl. Phys. 64, 2813 (1988).Google Scholar
[6] Chang, L. L. and Howard, W. E., Appl. Phys. Lett. 7, 210 (1965).Google Scholar
[7] Hung, R. Y. and Yon, E. T., J. Appl. Phys. 41, 2185 (1970).Google Scholar
[8] Korwin-Pawlowski, M. L. and Hesell, E. L., Phys. Stat. Solidi A 24, 649 (1974).Google Scholar
[9] Etchels, A. and Fischer, C. W., J. Appl. Phys. 47, 4605 (1976).Google Scholar
[10] Anderson, G. W., Schmidt, W. A., and Comas, J., J. Electrochem. Soc. 125, 424 (1978).Google Scholar
[11] Langan, J. D. and Viswanathan, C. R., J. Vac. Sci. Technol. 16, 1474 (1979).Google Scholar
[12] Vasquez, R. P. and Grunthaner, F. J., J. Vac. Sci. Tecnol. 19, 431 (1981).Google Scholar
[13] Vasquez, R. P. and Grunthaner, F. J., J. Appl. Phys. 52, 3509 (1981).Google Scholar
[14] Weiguo, Sun, Appl. Phys. A52, 75 (1991).Google Scholar