Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:42:02.554Z Has data issue: false hasContentIssue false

Advanced CVD Diamond Microtip Devices for Extreme Applications

Published online by Cambridge University Press:  10 February 2011

D.E. Patterson
Affiliation:
Extreme Devices, P.O. Box 162487, Austin, TX 787 16-2487, [email protected]
K.D. Jamison
Affiliation:
Extreme Devices, P.O. Box 162487, Austin, TX 787 16-2487
M.L. Kempel
Affiliation:
Extreme Devices, P.O. Box 162487, Austin, TX 787 16-2487
S. Freeman
Affiliation:
Extreme Devices, P.O. Box 162487, Austin, TX 787 16-2487
Get access

Abstract

Extreme Devices has fabricated and tested gated CVD diamond microtip arrays for use as cold cathodes in a variety of high power, high temperature, and high radiation applications. The uses for these devices include direct replacement of hot filament cathodes, microwave amplifiers, spaceborne sensors, and other areas requiring devices that provide high current output and that will function in harsh environments. The basic architecture of the device including an overview of the method for obtaining the self-aligned gated diamond microtip array is presented. Key developments for these robust devices include low electron extraction fields (3 V/μm), high current density output (>75A/cm2), stable operation for long periods of time, and operation in severe (high pressure) conditions. The gated cathodes offer low turn-on voltages (22 V) and appear to be well suited to a number of applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 lannazzo, S., Solid State Electronics 36 (3), 301 (1993).Google Scholar
2 Brodie, I and Schwoebel, P.R., Proc. IEEE 82 (7), 1006 (1994).Google Scholar
3 Spindt, C.A., Shoulders, K.R., and Heynick, L.N., U.S. Patent No. 3 789 471 (5 February 1974).Google Scholar
4 Brodie, I. and Spindt, C.A., Adv. Electron. Electron Phys. 83, 1 (1992).Google Scholar
5 Busta, H.H., J. Micromech. Microeng. 2, 42 (1992).Google Scholar
6 Wang, W.P., Davidson, J.L., Li, Q., Xu, J.F., Kinser, D.L., and Kerns, D.V., Applications of Diamond Films and Related Materials: Third International Conference, edited by Feldman, A., Tzeng, Y., Yarbrough, W.A., Yoshikawa, M., and Murakawa, M., pp. 3740 (1995).Google Scholar
7 Wang, W.P., Davidson, J.L., Howell, M., Bhuva, B., Kinser, D.L., Kerns, D.V., Li, Q., and Xu, J.F., J. Vac. Sci. Technol. B 14 (3), 2068 (1996).Google Scholar
8 Brodie, I. and Spindt, C.A., Vacuum Microelectronics, Vacuum Microelectronics Engineering Course Materials presented at UC Davis/SRI, pp. 1106.Google Scholar