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Advanced characterization of ultra-low-k periodic porous silica films – pore size distribution, pore-diameter anisotropy, and size and macroscopic isotropy of domain structure

Published online by Cambridge University Press:  01 February 2011

N. Hata ,
C. Negoro ,
S. Takada ,
K. Yamada ,
Y. Oku  and
T. Kikkawa
N. Hata
Affiliation:
Mirai-Asrc, AIST, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, JapanE-mail:[email protected]; Phone: +81-29-8615422; FAX: +81-29-8491528 Asrc, Aist, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
C. Negoro
Affiliation:
Asrc, Aist, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
S. Takada
Affiliation:
Asrc, Aist, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
K. Yamada
Affiliation:
Mirai-Aset, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569,Japan
Y. Oku
Affiliation:
Mirai-Aset, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569,Japan
T. Kikkawa
Affiliation:
Mirai-Asrc, AIST, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, JapanE-mail:[email protected]; Phone: +81-29-8615422; FAX: +81-29-8491528 Rcns, Hiroshima Univ., Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Abstract

We have shown previously the results from out-of-plane and in-plane X-ray scattering /diffraction measurements together with transmission electron microscope and X-ray reflectance measurements and shown that they are effective in characterization of a periodic porous silica low-k film [1]. In the present work, we report the results on pore-size distribution, pore-diameter anisotropy, and size and macroscopic isotropy of domain structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E9.6
Copyright
Copyright © Materials Research Society 2003

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References

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