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Adsorption and Decomposition of Diethylsilane on Silicon Surfaces

Published online by Cambridge University Press:  25 February 2011

P.A. Coon ,
M.L. Wise ,
A.C. Dillon ,
M.B. Robinson  and
S.M. George
P.A. Coon
Affiliation:
Department of Chemistry, Stanford University Stanford, CA 94305
M.L. Wise
Affiliation:
Department of Chemistry, Stanford University Stanford, CA 94305
A.C. Dillon
Affiliation:
Department of Chemistry, Stanford University Stanford, CA 94305
M.B. Robinson
Affiliation:
Department of Chemistry, Stanford University Stanford, CA 94305
S.M. George
Affiliation:
Department of Chemistry, Stanford University Stanford, CA 94305
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Abstract

Diethylsilane (DES), Si(C2H5)2H2, is a promising candidate for the atomic layer epitaxy of silicon. The adsorption and decomposition kinetics of DES on silicon surfaces were studied using laser-induced thermal desorption (LITD), temperature programmed desorption (TPD), and Fourier transform infrared (FTIR) spectroscopy. FTIR studies on porous silicon surfaces indicated that DES dissociatively adsorbs below 600 K and produces Si-H and Si-C2H5 surface species. The desorption products following DES adsorption on Si(111) 7×7 were C2H4 and H2 for all surface coverages using both LITD and TPD techniques. Ethylene and H2 desorption occurred at 700 and 810 K, respectively, during TPD experiments with a heating rate of β = 9 K/s. Ethylene desorption was consistent with a β-hydrogen elimination mechanism from the Si-C2H2 surface species. Isothermal LITD studies monitored the desorption kinetics of C2 H4 from Sl (111) 7×7 as a function of time following DES exposures. The first-order ethylene desorption kinetics were Ed = 36 kcal/mol and vd = 2.7 × 109 s−1. Additional LITD measurements determined that le initial reactive sticking coefficient of DES on Si(111) 7×7 decreased versus surface temperature. The temperature-dependent sticking coefficients suggested a precursormediated adsorption mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 303
Copyright
Copyright © Materials Research Society 1991

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References

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