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Adhesion Studies of Au Films on GaAs using Ion-Assisted Deposition Techniques

Published online by Cambridge University Press:  25 February 2011

A.J. Kellock ,
T.T. Bardin ,
P-W. Wang ,
J.E.E. Baglin  and
J.G. Pronko
A.J. Kellock
Affiliation:
IBM Almaden Research Center, K34/802, 650 Harry Road, San Jose, CA 95120-6099
T.T. Bardin
Affiliation:
Lockheed Research and Development Division, D91-10 B203 3251 Hanover St., Palo Alto, Ca., 94304-1191
P-W. Wang
Affiliation:
IBM Almaden Research Center, K34/802, 650 Harry Road, San Jose, CA 95120-6099
J.E.E. Baglin
Affiliation:
IBM Almaden Research Center, K34/802, 650 Harry Road, San Jose, CA 95120-6099
J.G. Pronko
Affiliation:
Lockheed Research and Development Division, D91-10 B203 3251 Hanover St., Palo Alto, Ca., 94304-1191
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Abstract

A series of experiments have been performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs <100> substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 19
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Bardin, T.T., Pronko, J.G., Senbetu, L., Mat.Res.Soc.Symp.Proc. 119, p.147 (1988)Google Scholar
2 Bardin, T.T., Pronko, J.G., Dozak, D.A., Appl.Phys.Lett. 54 p.173 (1989)Google Scholar
3 Roy, R.A., Petkie, R., Yee, D.S., Karasinki, J., Boulding, A., Mat. Res.Soc.Symp.Proc. 128, p.17 (1989)Google Scholar
4 Roy, R.A., Yee, D.S., Cuomo, J.J., Mat.Res.Soc.Symp.Proc. 128, p.23 (1989)Google Scholar
5 Greene, J.E., Rockett, A., Sundgren, J.E., Mat.Res.Soc.Symp.Proc. 75, p.39 (1975)Google Scholar
6 Huang, T.C., Lim, G., Parmiagianni, F., Kay, E., J.Vac.Sci.Technol. A3, p.2161 (1985)Google Scholar
7 Cuomo, J.J., Harper, J.M.E., Guarnieri, C.R., Yee, D.S., Attanasio, L.J., Angilello, J., Wu, C.T., Hammond, R.H., J.Vac.Sci.Technol. 20, p.349 (1982)Google Scholar
8 “Proc. Symp. Accuracy in Powder Diffraction” Ed. by Block, S. and Hubbard, C.R., p.95, NIST Gatherburg, MD 20899Google Scholar
9 Vook, R.W., Witt, F., J.Vac.Sci.Technol. 2, p.243 (1965)Google Scholar
10 Baglin, J.E.E., Clark, G.J., Bottiger, J., Mat.Res.Soc.Symp.Proc. 25, p.179 (1984)Google Scholar
11 Wang, Y.X., Holloway, P.H., J.Vac.Sci.Technol. B2, p.613 (1984)Google Scholar
12 Brillson, L.J., Brucker, C.F., Margaritondo, A., Slowik, J., Stoffel, N.G., J.Phys.Soc.Jpn, 49 Supp A, p.1089 (1980)Google Scholar
13 Feenstra, R.M., Phys.Rev.Lett. 63, p.1412 (1989)Google Scholar
14 Williams, R.S., Daley, R.S., Huang, J.H., Charatan, R.M., preprint, Dept of Chemistry & Biochemistry and Solid State Science Center, UCLA.Google Scholar
15 Yoshiie, T., Bauer, C.L., J.Vac.Sci.Tech. A1, p.334 (1983)Google Scholar