Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T15:16:40.071Z Has data issue: false hasContentIssue false

Adhesion Behavior of PIQ to Si/SiO2 Surfaces

Published online by Cambridge University Press:  25 February 2011

O. C. de Hodgins
Affiliation:
IBM Corporation, DSD, Poughkeepsie, N.Y., and Massachusetts Institute of Technology, Physics Department, Cambridge, Mass. 02139
D. R. Uhlmann
Affiliation:
Department of Materials Science and Engineering, M.I.T., Cambridge, Mass. 02139
G. C. Tesoro
Affiliation:
Polytechnic Institute of flew York
J. Angilello
Affiliation:
T.J. Watson Research Center, IBM Corporation, Yorktown Heights, N.Y. 10598.
Get access

Abstract

The present paper reports the results of an investigation of the adhesion characteristics of PIQ13, an isoindaloquin-azolinedione-modified polyimide, to silicon wafers. The wafers were used both untreated and pretreated with a layer of CVD SiO2. Also investigated was the adhesion behavior of a condensation-type polyimide, P15878. A comparison is made between the behavior of the PIQ with two different coupling agents, an aluminum chelate (Coupler 3) and γ-aminopropyltriethoxy silane (A-1100). Superior adhesion performance of the A-1100 is indicated; and with A-1100, the adhesion of the two resins is similar.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Perkins, K.D., Maleham, J., Rhodes, S.J. and Boys, D.R., A Versatil Multilevel Metallization Technology for VLSI Applications, 1981 Symposium on VLSI Technology, MAUI, HI, USA, N.Y., USA. 95, 80–1, 0. IEEE, 9–11, Sept. 1981.Google Scholar
2. Saiki, A. and Harada, S., New Coupling Method for Polyimide Adhesion to LSI Surface, J. Electrochem. Soc., Solid State and Science Technology 129, 22782282 (1982).Google Scholar
3. Saiki, A. et al., Fine Pattern Technology for Multilevel Metallization with PIQ Insulation, Trans. Inst. Electron and Commun. Eng. Japan Section E (Japan), E 63, 686 (1980).Google Scholar
4. Hitachi Chemical Data Sheet Y-095, Section 4.5, Comparison Between Properties of PIQ and Some Inorganic Materials and Section 4.6, Adhesion of PIQ, Nov. 1981.Google Scholar
5. Hitachi Chemical, personal communication from A. Yamanaka on Structure and Properties of PIQ 13, March 28, 1986.Google Scholar
6. Juey, H. Lal, and Richard B., Douglas, Characterization and Processing of Polyimide Thin Films for Microelectronics Characterization, Ind. Eng. Chem. Res. Div. 38–40 (1986).CrossRefGoogle Scholar
7. Segmuller, A., Angilello, J., and Placa, S. La, Automatic X-ray diffraction Measurements of the Lattice Curvature of Substrate Wafers for the Determination of Linear Stress Patterns, J. Appl. Phys. 51 (1980).CrossRefGoogle Scholar
8. Kim, Kyung-Suk, Elasto Plastic Analysis of Peel Test, p. 72 (1985).Google Scholar