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Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

Published online by Cambridge University Press:  15 February 2011

C.T. Rosenmaver ,
J. W. Bartz  and
J. Hammes
C.T. Rosenmaver
Affiliation:
W. L. Gore & Associates, Inc., Sky Park Technology Center, 1414 W. Hamilton Ave., Eau Claire, Wisconsin, 54701
J. W. Bartz
Affiliation:
W. L. Gore & Associates, Inc., Sky Park Technology Center, 1414 W. Hamilton Ave., Eau Claire, Wisconsin, 54701
J. Hammes
Affiliation:
W. L. Gore & Associates, Inc., Sky Park Technology Center, 1414 W. Hamilton Ave., Eau Claire, Wisconsin, 54701
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Abstract

Previous work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.

This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 231
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1 Low Dielectric Constant Materials - Synthesis and Applications in Microelectronics, edited by Lu, T. M., et al. , (Mater. Res. Soc. Proc. 381, Pittsburgh, PA, 1995).Google Scholar
2 Advanced Metallization for Future ULSI, edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996).Google Scholar
3 Advanced Metallization for Future ULSI, edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996). p. 261 - 266.Google Scholar
4 Advanced Metallization for Future ULSI, edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996). p. 79 - 92.Google Scholar
5 Advanced Metallization for Future ULSI, edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996). p. 105 -110.Google Scholar
6 Hiraoka, Hiroyuki and Lazare, Sylvain, Applied Surface Science 46 342–347 (1990).Google Scholar
7 , Licari, James J. and Hughes, Laura A., Handbook of Polymer Coatings for Electronics, 2nd edition, (Noyes Publications, Park Ridge, NJ, 1990) pp. 65–73.Google Scholar
8 Rosenmayer, Tom and Wu, Huey in Advanced Metallization for Future ULSI, edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J. (Mater. Res. Soc. Proc. 427, Pittsburgh, PA 1996) p.463–468.Google Scholar
9 Sun, S. C., Chiang, Y. C., Rosenmayer, C. T., Teguh, J., Wu, H. in Los Dielectric Constant Materials, (Mater. Res. Soc. Proc. 427, Pittsburgh, PA 1996) p. 463–468.Google Scholar