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Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology

Published online by Cambridge University Press:  01 February 2011

Jackson Lai ,
Nader Safavian ,
Arokia Nathan  and
John A. Rowlands
Jackson Lai
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada.
Nader Safavian
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada.
Arokia Nathan
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada.
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Abstract

Major development challenges in application of hydrogenated amorphous silicon (a-Si:H) technology to large area digital X-ray imaging and technological attributes such as low temperature deposition and high uniformity over large area evolve around dynamic imaging modalities such as fluoroscopy, which demands both high speed readout and signal amplification capabilities in addition to long term device stability. This work reports on initial results of a variety of TFT active pixel sensor (APS) structures in a-Si:H technology, each demonstrating unique capabilities such as enhancements in signal gain, TFT threshold voltage immunity, and real-time high speed readout.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A22.4
Copyright
Copyright © Materials Research Society 2005

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References

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