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Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Yan Chen ,
Jun Mei ,
Qijin Chen  and
Zhangda Lin
Yan Chen
Affiliation:
State Key Laboratory of surface physics, Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing 100080, P.R.China
Jun Mei
Affiliation:
Chinese Academy of Engineering Physics, P.O.Box 521–105, Chengdu 610003, Sichuan, China
Qijin Chen
Affiliation:
State Key Laboratory of surface physics, Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing 100080, P.R.China
Zhangda Lin
Affiliation:
State Key Laboratory of surface physics, Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing 100080, P.R.China
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Abstract

Diamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 175
Copyright
Copyright © Materials Research Society 1995

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