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The Achievement of Low Contact Resistance to Indium Phosphide: the Roles of Ni, Au, Ge, and Combinations Thereof

Published online by Cambridge University Press:  25 February 2011

Navid S. Fatemi  and
Victor G. Weizer
Navid S. Fatemi
Affiliation:
Sverdrup Technology, Inc., Lewis Research Center Group, Brook Park, OH 44142
Victor G. Weizer
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
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Abstract

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity (pc) in the E-7 Ω-cm2 range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in pc. Ultra-low contact resistivities in the E-8 Ω-cm2 range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed pc values in the Ni and the Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 537
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Bahir, G., Merz, J. L., Abelson, J. R., and Sigmon, T. W., J. Electron. Mat. 16, 257 (1987).CrossRefGoogle Scholar
2. Del Alamo, J. A. and Mizutani, T., Solid-State Electron. 31, 1635 (1988).CrossRefGoogle Scholar
3. Kuan, T. S., Batson, P. E., Jackson, T. N., Rupprecht, H., and Wilkie, E. L., J. Appl. Phys. 54, 6952 (1983).Google Scholar
4. Murakami, M., Baker, J. M., and Callegari, A., J. Vac. Sci. technol. B 4, 903 (1986).CrossRefGoogle Scholar
5. Weizer, V. G. and Fatemi, N. S., J. Appl. Phys. 69, 8253 (1991).Google Scholar
6. Weizer, V. G., Fatemi, N. S., and Korenyi-Both, A. L., Proc. Fourth International Conf. on Indium Phosphide and Related Materials, Newport, RI, 1992.Google Scholar
7. Berger, H. H., Solid-State Electron. 15, 145 (1972).CrossRefGoogle Scholar
8. Ivey, D. G., Bruce, R., and Piercy, G. R., J. Electron. Mat. 17, 373 (1988).Google Scholar
9. Fatemi, N. S. and Weizer, V. G., J. Electron. Mat. 20, 875 (1991).Google Scholar
10. Morkoc, H., Drummond, T. J., and Stanchak, C. M., IEEE Trans. Electron. Dev. ED- 28, 1 (1981).Google Scholar
11. O'Keefe, M. F. J., Miles, R. E., and Howes, M. J., Proc. First International Conf. on Indium Phosphide and Related Materials, Norman, OK, 1989, p. 361.Google Scholar
12. Erickson, L. P., Waseem, A., and Robinson, G. Y, Thin Solid Films, 64, 421 (1979).Google Scholar