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Accurate Depth Profiling of Ultra-Thin Oxide Films by Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  10 February 2011

Stephen P. Smith ,
Ming Hong Yang  and
Victor K. F. Chia
Stephen P. Smith
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Ming Hong Yang
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Victor K. F. Chia
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
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Abstract

SurfaceSIMS depth profile measurements of dopants in silicon wafers with thin thermal oxide layers are presented. Complete and accurate calibration of these profiles requires layered data reduction to adjust for residual matrix effects of a factor of two in the sputter rate and SIMS relative sensitivity factor in SiO2 compared with bulk silicon. Properly calibrated profiles show good agreement with expected ion implant profile shapes, and can reveal dopant pile-up at SiO2/Si interfaces (phosphorus, for example). Measured SurfaceSIMS profiles of B doping within the first 10 nm of the substrate Si of experimental large area MOS capacitors show good agreement with dopant profiles independently obtained from experimental C-V data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 347
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Smith, S. P., (Mater. Res. Soc. Proc. 386, Pittsburgh, PA 1995), pp. 157–162.Google Scholar
2. Smith, S. P., in Secondary Ion Mass Spectrometry (SIMS X), edited by Benninghoven, A., Hagenhoff, B. and Werner, H. W (John Wiley & Sons, Chichester, 1997) pp. 485–488.Google Scholar
3. Chindalore, G., Hareland, S. A., Jallepalli, S., Tasch, A. F., Jr., Maziar, C. M., Chia, V. K. F., and Smith, S., (TECHCON '96, Phoenix, AZ, 1996).Google Scholar