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Accelerated Molecular Dynamics Simulation of AFM Experiments Using the Bond-Boost Method

Published online by Cambridge University Press:  01 February 2011

Woo Kyun Kim
Affiliation:
[email protected], The University of Michigan, Mechanical Engineering, 2300 Hayward St., Ann Arbor, MI, 48109, United States
Michael L. Falk
Affiliation:
[email protected], The University of Michigan, Materials Science and Engineering, 2300 Hayward St., Ann Arbor, MI, 48109, United States
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Abstract

Accelerated molecular dynamics (MD) simulations of recent Atomic Force Microscope (AFM) experiments on oxidized silicon surfaces demonstrate a nontrivial dependence of frictional force on sliding velocity as well as temperature. By implementing hyper dynamics (HD) via the bond-boost method these simulations achieve sliding velocities in the range of real experimental values. Moreover, an analysis of the effects of temperature and sliding velocity on friction provide evidence for a systematic deviation from the modified Tomlinson model. We hypothesize regarding the origin of these deviations, and use the simulations to analyze the atomic processes that accompany sliding.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Gnecco, E., Bennewitz, R., Gyalog, T., Ch. Loppacher, Bammerlin, M., Meyer, E., and Güntherodt, H.-J., Phys. Rev. Lett. 84, 1172 (2000)Google Scholar
2. Sang, Y., Dubé, M., and Grant, M., Phys. Rev. Lett. 87, 174301 (2001)Google Scholar
3. Riedo, E., Gnecco, E., Bennewitz, R., Meyer, E., and Brune, H., Phys. Rev. Lett. 91, 084502 (2003)Google Scholar
4. Schirmeisen, A., Jansen, L., Hölscher, H., and Fuchs, H., Appl. Phys. Lett. 88, 123108 (2006)Google Scholar
5. Zhao, X., Hamilton, M., Sawyer, W. G., and Perry, S. S., Tribol. Lett. 27, 113 (2007)Google Scholar
6. He, G., Müser, M. H., and Robbins, M. O., Science 284, 1650 (1999)Google Scholar
7. He, G., and Robbins, M. O., Tribol. Lett. 10, 7 (2001)Google Scholar
8. Fu, X.-Y., Falk, M. L., and Rigney, D. A., Wear 250, 420 (2001)Google Scholar
9. Lorenz, C. D., Webb, E. B. III, Stevens, M. J., Chandross, M., and Grest, G. S., Tribol. Lett. 19, 93 (2005)Google Scholar
10. Voter, A. F., J. Chem. Phys. 106, 4665 (1997)Google Scholar
11. Miron, R. A., and Fichthorn, K. A., J. Chem. Phys. 119, 6210 (2003)Google Scholar
12. Watanabe, T., Fujiwara, H., Noguchi, H., Hoshino, T., and Ohdomari, I., Jpn. J. Appl. Phys. 38, L366 (1999)Google Scholar
13. Torre, J. Dalla, Bocquet, J.-L., Limoge, Y., Crocombette, J.-P., Adam, E., Martin, G., Baron, T., Rivallin, P., and Mur, P., J. Appl. Phys. 92, 1084 (2002)Google Scholar
14. Evstigneev, M., Shirmeisen, A., Jansen, L., Fuchs, H., and Reimann, P., Phys. Rev. Lett. 97, 240601 (2006)Google Scholar