Hostname: page-component-669899f699-chc8l Total loading time: 0 Render date: 2025-05-03T17:00:13.522Z Has data issue: false hasContentIssue false
  • English
  • Français

Absolute Pressure Derivatives of Deep Level Defects in III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

D. D. Nolte ,
W. Walukiewicz  and
E. E. Hailer
D. D. Nolte
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, 94720
W. Walukiewicz
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, 94720
E. E. Hailer
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, 94720
Get access

Abstract

Based on transition metal reference levels, we present absolute pressure derivatives for band-edges in GaAs and InP and defects in GaAs. The defect deformation potentials are directly related to the electron-lattice coupling which drives lattice relaxation around the defects. We find an exceedingly large inward lattice relaxation of the EL2 defect in GaAs upon electron emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 423
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Ledebo, L. and Ridely, B. K., J. Phys. C15, L961 (1982)Google Scholar
2Caldas, M. J., Fazzio, A. and Zunger, A., Appl. Phys. Lett. 45, 671(1984)Google Scholar
3Langer, J. M. and Heinrich, H., Phys. Rev. Lett. 55, 1414(1985)Google Scholar
4Walle, C. G. Van de and Martin, R. M, Phys. Rev. B35, 8154(1987)Google Scholar
5Zunger, A., Solid State Physics, vol.39, Academic Press (1986)Google Scholar
6Tersoff, J., Phys. Rev. B32, 6968(1985)Google Scholar
7Cardona, M. and Christensen, N. E., Phys. Rev. B35, 6182(1987)Google Scholar
8Tersoff, J., Phys. Rev. B30, 4874(1984)Google Scholar
9Nolte, D. D., Walukiewicz, W. and Hailer, E. E., Phys. Rev. Lett. 59, 501(1987 )Google Scholar
10Walle, C. G. Van de and Martin, R. M., unpublishedGoogle Scholar
11Nolte, D. D., Walukiewicz, W. and Hailer, E. E., accepted Phys. Rev. B 36 (1987)Google Scholar
12Samara, G. A., Phys. Rev. B36, 4841(1987)Google Scholar