Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-19T23:52:29.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Zone-Melting Recrystallization of Semiconductor Films

Published online by Cambridge University Press:  15 February 2011

M. W. Geis ,
Henry I. Smith ,
B-Y. Tsaur ,
John C. C. Fan ,
D. J. Silversmith ,
R. W. Mountain  and
R. L. Chapman
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Henry I. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
D. J. Silversmith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Get access

Abstract

The use of zone melting recrystallization (ZMR) to prepare large-grain(and in some cases single-crystal) semiconductor films is reviewed, with emphasis on recent work on Si on SiO2. Encapsulants are generally required to minimize contamination and decomposition, induce a crystalline texture,improve surface morphology and prevent agglomeration. In the case of Si, the solid-liquid interface is faceted, which gives rise to subboundaries. These can be entrained by laterally modulating the temperature through the use of an optical absorber on top of the encapsulant. Control of thermal gradients and in-plane crystallographic orientation are important for reliable entrainment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 477
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. British Patent 691, 335, Leitz, E., published May 13, 1953 “Improvements in or Relating to Methods of Making Luminescent Screens”.Google Scholar
2.Mitchell, J. W., Proc. R. Soc. London A 371, 149 (1980).Google Scholar
3.Hedges, J. M. and Mitchell, J. W., Philos. Mag. 44, 223 (1953).Google Scholar
4.Maserjian, J., Solid-State Electron. 6, 477 (1963).Google Scholar
5.Fan, J. C. C., Zeiger, H. J., Gale, R. P. and Chapman, R. L., Proc. 14th IEEE Photovoltaic Specialists Conference,San Diego, CA,1980.Google Scholar
6.Billings, A. R., J. Vac. Sci. Technol. 6, 757 (1969).Google Scholar
7.Laff, R. A. and Hutchings, G. L., IEEE Trans. Electron Devices ED–21, 743 (1974).Google Scholar
8.Biegelsen, D. K., Johnson, N. M. and Mayer, M. D., Laser and Electron Beam Solid Interactions and Material Processing, Edited Gibbons, J. F., Hess, L D. and Sigmon, T. W. (Elsevier, New York, 1981) p. 487.Google Scholar
9.Geis, M. W., Antoniadis, D. A., Silversmith, D. J., Mountain, R. W. and Smith, H. I., Appl. Phys. Lett. 37, 454 (1980).Google Scholar
10.Kamins, T. I., J. Electrochem. Soc. 128, 1824 (1981).Google Scholar
11.Geis, M. W., Smith, H. I., Tsaur, B-Y., Fan, J. C. C., Maby, E. W. and Antoniadis, D. A., Appl. Phys. Lett. 40, 158 (1982),Google Scholar
11a and Maby, E. W., Geis, M. W., LeCoz, Y. L., Silversmith, D. J., Mountain, R. W. and Antoniadis, D. A., Electron Device Lett. ED–2, 241 (1981).Google Scholar
12.Geis, M. W., Antoniadis, D. A., Silversmith, D. J., Mountain, R. W. and Smith, H. I., J. Vac. Sci. Technol. 18, 229 (1981).Google Scholar
13.Knapp, J. A. and Picraux, J. T., these proceedings.Google Scholar
14.Tsaur, B-Y., Fan, J. C. C., Geis, M. W., Silversmith, D. J. and Mountain, R. W., Appl. Phys. Lett. 39, 561 (1981).Google Scholar
15.Pinizzotto, R. F., Lam, H. W. and Vaandrager, B. L., Appl. Phys. Lett. 40, 388 (1982).Google Scholar
16.Lemons, R. A., these proceedings.Google Scholar
17.Stultz, T. J., Sturm, J. and Gibbons, J. F., these proceedings.Google Scholar
18.Kamgar, A. and Rozgonzi, G. A., these proceedings.Google Scholar
19.Geis, M. W., Smith, H. I., Tsaur, B-Y., Fan, J. C. C., Silversmith, D. J. and Mountain, R. W., J. Electrochem. Soc. 129, 2813 (1982).Google Scholar
20.Spivak, J. F. and Carrel, J. A., J. Appl. Phys. 36, 2321 (1965).Google Scholar
21.Fan, J. C., Geis, M. W. and Tsaur, B-Y., Appl. Phys. Lett. 38, 365 (1981).Google Scholar
22.Tamura, M., Tamura, H. and To Kuyama, T., Jpn. J. Appl. Phys. 19, 123 (1980).Google Scholar
23.Smith, H. I., Atwater, H. A. and Geis, M. W., Extended Abstract, 161 Meeting of Electrochemical Society, Montreal, Canada, May 9–14, 1982,session on Growth of Single Crystals on Amorphous Substrates.Google Scholar
24.Atwater, H. A., Smith, H. I. and Geis, M. W., Appl. Phys. Lett. 41, 747(1982).Google Scholar
25.Fan, J. C. C., Tsaur, B-Y., Chapman, R. L. and Geis, M. W., Appl. Phys.Lett. 41, 186 (1982).Google Scholar
26.Colinge, J. D., Auvert, G. and Temerson, J. M., Extended Abstract, 161 Meeting of Electrochemical Society, Montreal, Canada, May 9014, 1982,session on Growth of Single Crystals on Amorphous Substrates.Google Scholar
27.Geis, M. W., Smith, H. I., Thompson, C. V., Silversmith, D. J. and Mountain, R. W., to be published in J. Electrochem. Soc.,Google Scholar
27a Also Geis, M. W. et al. , Electronic Materials Conference(Fort Collins, Colorado,June 1982).Google Scholar
28.Bezjian, K. A., Smith, H. I., Carter, J. M. and Geis, M. W., J. Electrochem.Soc. 129, 1848 (1982).Google Scholar
30.Celler, G. K., Trimble, L. E., Ng, K. K., Leamy, H. J. and Baumgart, H., Appl. Phys. Lett. 40, 1043 (1982).Google Scholar
31.Hawkins, W. G., Black, J. G. and Griffiths, C. H., Appl. Phys. Lett. 40, 319 (1982).Google Scholar
32.Lemons, R. A., Bosch, M. A., Cheng, J. and Leamy, H. J., Electronic Materials Conference,(Fort Collins, Colorado,June, 1982).Google Scholar
33.Leamy, H. J., Chang, C. C., Baumgart, H., Lemons, R. A. and Cheng, J., Mater.Lett. 1, 33 (1982).Google Scholar
34.Pinizzotto, R. F., Electronic Materials Conference,(Fort Collins,Colorado,June 1982).Google Scholar
35.Tsaur, B-Y., Fan, J. C., Geis, M. W., Chapman, R. L., Brueck, S. R. J., Silversmith, D. J. and Mountain, R. W., these proceedings.Google Scholar
36.Tsaur, B-Y., Fan, J. C. C., Chapman, R. L. and Geis, M. W., Appl. Phys.Lett. 40, 322 (1982).Google Scholar
37.Tsaur, B-Y., Fan, J. C. C., Chapman, R. L., Geis, M. W., Silversmith, D. J., and Mountain, R. W., to be published in Electron Dev. Lett.Google Scholar