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Zone Melting Recrystallization of Patterned Films and Low-Temperature Graphoepitaxy

Published online by Cambridge University Press:  22 February 2011

Henry I. Smith ,
C.V. Thompson ,
M.W. Geis ,
H. Atwater ,
T. Yonehara  and
C.C. Wong
Henry I. Smith
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
C.V. Thompson
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
M.W. Geis
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
H. Atwater
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
T. Yonehara
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
C.C. Wong
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
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Abstract

Zone melting recrystallization (ZMR) of Si films on SiO2 has produced large-area films with electrical properties approaching those of bulk wafers. The mechanisms of film formation and the use of patterning to control orientation and defect distribution are briefly reviewed. Some examples of the use of patterning are: single-grain films have been produced by means of planar constrictions; subboundaries and impurities have been entrained to lie along straight lines separated by ∼100μm through the use of lithographically defined grating patterns; a vertical-constriction technique has enabled (100) texture to be achieved in 50μm-thick Si films; a lithographically-defined orientation filter, which takes advantage of growth-velocity anisotropy, has been used to select a predetermined azimuthal orientation.

Patterning is also fundamental to graphoepitaxy. Current research emphasizes low temperature processes based on solid-state surface-energy-driven secondary grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 459
Copyright
Copyright © Materials Research Society 1984

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Footnotes

(a)

Department of Electrical Engineering and Computer Science

(b)

Department of Materials Science and Engineering

(c)

Lincoln Laboratory, Lexington, MA 02173

(d)

Center for Advanced Engineering Study

References

REFERENCES

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