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ZnO and ZnMgO Growth by Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

Mitsuaki Yano ,
Ken-ichi Ogata ,
FengPing Yan ,
Kazuto Koike ,
Shigehiko Sasa  and
Masataka Inoue
Mitsuaki Yano
Affiliation:
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan
Ken-ichi Ogata
Affiliation:
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan
FengPing Yan
Affiliation:
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan
Kazuto Koike
Affiliation:
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan
Shigehiko Sasa
Affiliation:
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan
Masataka Inoue
Affiliation:
New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535–8585, Japan
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Abstract

Characteristics of the ZnO and ZnMgO films grown by radical-source molecular beam epitaxy are reported. The ZnO films on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties, and n-type doping with Al was successfully performed up to 1020 cm–3. The Mg-content of ZnMgO alloys was found to be controlled by a simple growth mechanism as a function of Mg-cell temperature. The alloying in the ZnO-rich region resulted in single-crystalline growth although the photoluminescence characteristics at x = 0.22 suggested the presence of microscopic phase separation. Single-crystalline growth was also achieved on Si (111) substrates by using a CaF2 buffer layer to protect the Si-surface from oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M3.1
Copyright
Copyright © Materials Research Society 2003

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References

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