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Zirconium Nitride Films formed by Dynamic Ion Implantation

Published online by Cambridge University Press:  25 February 2011

I. C. Oppenheim  and
K.R. Padmanabhan
I. C. Oppenheim
Affiliation:
Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218
K.R. Padmanabhan
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48202
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Abstract

RF sputter deposition of 500 nm thick zirconium films was carried on simultaneously with implantation of singly ionized molecular nitrogen. Samples were prepared at room temperature (23°C) with a nitrogen to zirconium arrival ratio varying from 2.7x10-2 to 4.4x10-1 and with the ion energy varying from 100 to 300 keV.

Stoichiometry of the films and ion concentration profiles were determined by Rutherford Backscattering Spectrometry. Results from a theoretical model for the ion concentration profiles were compared to profiles derived from experiments. Grazing Angle X-Ray Diffraction was used to correlate nitride phase formation to processing parameters.

Knoop microhardnesses of films deposited on 304 stainless steel substrates were determined. The relative microhardness of the samples were studied as a function of parameters such as film stoichiometry and ion implantation energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 37
Copyright
Copyright © Materials Research Society 1990

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References

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