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Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films

Published online by Cambridge University Press:  01 February 2011

Ruey-Ven Wang ,
Paul C. McIntyre ,
John D. Baniecki ,
Kenji Nomura ,
Takeshi Shioga  and
Kazuaki Kurihara
Ruey-Ven Wang
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA, USA
Paul C. McIntyre
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA, USA
John D. Baniecki
Affiliation:
Fujitsu Laboratories, Atsugi, Japan
Kenji Nomura
Affiliation:
Fujitsu Laboratories, Atsugi, Japan
Takeshi Shioga
Affiliation:
Fujitsu Laboratories, Atsugi, Japan
Kazuaki Kurihara
Affiliation:
Fujitsu Laboratories, Atsugi, Japan
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Abstract

High dielectric constant, perovskite-structure materials, such as barium strontium titanate (BST), have been widely investigated for use in GHz LSI decoupling capacitor applications. In addition to modifying deposition process parameters, such as increasing deposition temperature, doping may be a viable way to increase permittivity and tunability in BST thin films without increasing the thermal budget. In this research, the effects of Y dopants on the dielectric behavior of RF-sputtered BST thin films have been systematically investigated. The BST thin films were deposited using ceramic targets with different compositions of yttrium oxide dopant. With Y-doping concentration of ∼ 1.3 at.%, the permittivity at around zero electrical fields can be increased by more than 70% compared to nominally undoped BST thin films produced under the same deposition conditions. Based on x-ray diffraction strain analysis and inductively-coupled plasma composition measurements, the correlations among the dopant composition, BST film elastic strain and dielectric behavior have been systematically studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G1.7
Copyright
Copyright © Materials Research Society 2005

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References

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