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X-ray topography and EBIC studies of misfit dislocations in strained layer structures

Published online by Cambridge University Press:  26 February 2011

N. Hamaguchi ,
T. P. Humphreys ,
C. A. Parker ,
S. M. Bedair ,
B-L. Jiang ,
Z. J. Radzimski  and
G. A. Rozgonyi
N. Hamaguchi
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University
T. P. Humphreys
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University
C. A. Parker
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University
S. M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University
B-L. Jiang
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695
Z. J. Radzimski
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695
G. A. Rozgonyi
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

X-ray topography(XRT) and EBIC have been used to study the generation of misfit dislocations in strained layer structures. Two structures studied were GaAs1−yPy(y=0.15) film and SLS consisting of InxGa1−xAs(x=0.08) and GaAs1−y Py(y=0.16) layers. XRT and EBIC techniques gave consistent results for the behavior of dislocations. The value of the critical thickness for generation of misfit dislocations in the former was found to be few times larger than that in the latter. EBIC image showed that a SLS lattice matched to the substrate is effective in reducing defects originating from the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 541
Copyright
Copyright © Materials Research Society 1988

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References

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