Hostname: page-component-669899f699-vbsjw Total loading time: 0 Render date: 2025-04-24T17:44:47.669Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray Scattering from Interfaces

Published online by Cambridge University Press:  21 February 2011

E. Vlieg  and
H. A. Van Der Vegt
E. Vlieg
Affiliation:
FOM-Institute Amolf, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
H. A. Van Der Vegt
Affiliation:
FOM-Institute Amolf, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Get access

Abstract

X-ray diffraction has found an increasing use in the characterization of surface structures. Due to the high penetration depth of X-rays, the technique is also very suitable for the study of buried interfaces. We will give a general outline of the technique, and then discuss two examples concerning epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 359
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Eisenberger, P. and Marra, W.C., Phys. Rev. Lett. 46, 1081 (1981).Google Scholar
[2] Andrews, S.R. and Cowley, R.A., J. Phys. C18, 6427 (1985).Google Scholar
[3] Robinson, I.K., Phys. Rev. B33, 3830 (1986).Google Scholar
[4] Feidenhans'l, R., Surf. Sci. Rep. 10, 105 (1989)Google Scholar
[5] Robinson, I.K., in: Handbook on Synchrotron Radiation, Vol. 3, eds. Moncton, D.E. and Brown, G. S. (North-Holland, Amsterdam, 1991).Google Scholar
[6] Robinson, I.K., Waskiewicz, W.K., Tung, R.T. and Bohr, J., Phys. Rev. Lett. 57, 2714 (1986).Google Scholar
[7] Robinson, I.K., Tung, R.T. and Feidenhans'l, R., Phys. Rev. B 38, 3632 (1988).Google Scholar
[8] Ocko, B.M., Wang, J., Davenport, A. and Isaacs, H., Phys. Rev. Lett. 65, 1466 (1990).Google Scholar
[9] Fuoss, P.H., Kisker, D.W., Renaud, G., Tokuda, K.L., Brennan, S. and Kahn, J., Phys. Rev. Lett. 63, 2389 (1989);Google Scholar
Fuoss, P.H., Lamelas, F.J., Imperatori, P., Kisker, D.W., Stephenson, G.B. and Brennan, S., these proceedings.Google Scholar
[10] Marra, W.C., Eisenberger, P. and Cho, A.Y., J. Appl. Phys. 50, 6927 (1979).CrossRefGoogle Scholar
[11] Mo, Y.-W., D.E., Google Scholar
[12] Williams, A.A., Thornton, J.M.C., Macdonald, J.E., van Silfhout, R.G., van der Veen, J.F., Finney, M.S., Johnson, A.D. and Norris, J., Phys. Rev. B 43, 5001 (1991).Google Scholar
[13] Copel, M., Reuter, M.C., Kaxiras, E. and Trump, R.M., Phys. Rev. Lett. 63, 632 (1989).Google Scholar
[14] Thornton, J.M.C., Williams, A.A., Macdonald, J.E., van Silfhout, R.G., van der Veen, J.F., Finney, M. and Norris, C., proceeding Phys. and Chem. of Semiconductor Interfaces, Long Beach, CA, 1991.Google Scholar
[15] Egelhoff, W.F. Jr, and Jacob, I., Phys. Rev. Lett. 62, 921 (1989).Google Scholar
[16] Kunkel, R., Poelsema, B., Verheij, L.K. and Comsa, G., Phys. Rev. Lett. 65, 733 (1990).Google Scholar
[17] Vlieg, E., Denier van der Gon, A.W., van der Veen, J.F., Macdonald, J.E. and Norris, C., Phys. Rev. Lett. 61, 2241 (1988).Google Scholar
[18] van der Vegt, H.A., Thornton, J.M.C., van Pinxteren, H.M., Lohmeier, M. and Vlieg, E., to be published.Google Scholar