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X-Ray Reflectometry from Semiconductor Surfaces and Interfaces

Published online by Cambridge University Press:  21 February 2011

Brian K Tanner ,
Simon J Miles ,
D Keith Bowen ,
Linda Hart  and
Neil Loxley
Brian K Tanner
Affiliation:
Department of Physics, Durham University, South Road, Durham, DH1 3LE, UK
Simon J Miles
Affiliation:
Department of Physics, Durham University, South Road, Durham, DH1 3LE, UK
D Keith Bowen
Affiliation:
Department of Engineering, Warwick University, Coventry, CV4 7AL, UK
Linda Hart
Affiliation:
Department of Engineering, Warwick University, Coventry, CV4 7AL, UK
Neil Loxley
Affiliation:
Bede Scientific Instruments, Lindsey Park; Bowburn, Durham, DH6 5PF, UK
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Abstract

X-ray reflectance measurements at grazing incidence provide non-destructively a measure of the thickness of thin layers, the electron density as a function of depth, and interface and surface roughness. We show that the effect of roughness at a buried interface is only to reduce the visibility of the interference fringes, whereas roughness at the top surface leads also to an overall increase in the rate of fall of intensity with angle (or energy). These two contributions can then be readily distinguished.

Most work has been performed in monochromatic angular dispersive mode. We present here a preliminary study of the application of the high-energy, fixed-angle, energy dispersive mode for the study of thin epitaxial layers, Langmuir-Blodgett films, surface damage on silicon chemi-sol polished wafers and ion implanted silicon and aluminium. Data has been analysed using the theory of Parratt, which we have adapted for use in the energy dispersive method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 345
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Kiessig, H Von, Ann Physik 10, 715 and 769 (1931).Google Scholar
2. Pomerantz, M., Thin Solid Films 152, 165 (1987).Google Scholar
3. Jark, W., Cornelli, G., Russel, T. P. and Stohr, J. Thin Solid Films 170 309 (1989).Google Scholar
4. Bloch, R., Brugemann, L. and Press, W., J Phys D: Appl Phys, 22 1136 (1989).CrossRefGoogle Scholar
5. Smirnov, L. A., Sotnikova, T. V., Anokhin, B. S. and Taibin, B. Z., Opt Spectrosc 46, 329 (1979).Google Scholar
6. Roberts, K. J., Sherwood, J. N., Shripathi, T., Oldman, R. J., Holmes, P. A. and Nevin, A., J Phys D: Appl Phys, (in press).Google Scholar
7. Lucas, C. A., Hatton, P. D., Bates, S., Ryan, T. W., Miles, S. J. and Tanner, B. K., J Appl Phys 63, 1936 (1988).Google Scholar
8. Parratt, L. G., Phys Rev 95, 359 (1954).Google Scholar
9. Cowley, R. A. and Ryan, T. W., J Phys D: Appl Phys, 20 61 (1987).Google Scholar
10. D.Ashworth, C., Messoloras, S., Stewart, R. J. and Penfold, J., Semicond Sci Tech 4, 1 (1989).Google Scholar
11. Bilderback, D. H. and Hubbard, J., Nucl Instr Meth 195, 85 and 91 (1982).Google Scholar
12. Holy, V., Cummings, S. and Hart, M., J Appl Cryst 21, 516 (1988)Google Scholar
13. Fisher, G. R., 1988 (private communication)Google Scholar
14. Hart, L, Ph.D. Thesis, Warwick University, 1990.Google Scholar