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X-Ray, Photoluminescence and Etching Studies of Indium-Doped LPE GaAs Layers

Published online by Cambridge University Press:  26 February 2011

J.F. Chen ,
C. R. Wie  and
F. A. Junga
J.F. Chen
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
C. R. Wie
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
F. A. Junga
Affiliation:
Lockheed Palo Alto Research Lab, Palo Alto, CA 94304
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Abstract

The effects of In doping on the structural properties of liquid phase epitaxially (LPE) grown GaAs layers are studied. The distribution coefficient of In in the GaAs at 800 ° C was determined to be 0.033 which was consistent with the value calculated from the pseudobinary phase diagram of the ternary system at a dilute In concentration. The full widths at halfmaximum (FWHM) of x-ray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 × 1019 cm−3, beyond which a sharp increase in the FWHM is observed. Etch pit density (EPD) measurement shows that the dislocation density is reduced by doping the epi-layer with In. At the optimal In concentration of 2.4 × 1019 cm−3, the EPD is reduced by a factor of 20 when measured at the surface of a 9 um thick epilayer.

Photoluminesce measurements made at 15 K show two sharp emission spectra near the bandedge. The relative intensities of the two emissions, I(l.49eV)/I(l.5eV) are reduced with increasing In content. This suggests that incorporation of Carbon acceptors is suppressed by In doping in the GaAs epilayers. The FWHM as small as 5 meV of the bandedge transition was obtained for the epi-layer doped with In concentration of 2.4 × 1019 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 9
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

l. Jacob, G., Duseaus, M., Farges, J.P., Van Den Boom, M.M.B. and Poksnoer, P.J., J.Crystal Growth 61, 417 (1983).CrossRefGoogle Scholar
2. Mitchel, W.C. and Yu, P.W., J. Appl. Phys. 57, 623 (1985).CrossRefGoogle Scholar
3. Beneking, H., Narozny, P., and Emeis, N., Appl. Phys. Lett. 47,828 (1985).CrossRefGoogle Scholar
4. Bhattacharya, P.K., Dhar, S., Berger, P., and Juang, F., Appl. Phys. Lett. 49, 470 (1986).CrossRefGoogle Scholar
5. Bourret, E.D., Tabache, M.G. and Beeman, J.W., J.Crystal Growth 85, 275 (1987).CrossRefGoogle Scholar
6. Blom, G.M. and Woodall, J.M., J. Electron. Mater. 17, 391 (1988).CrossRefGoogle Scholar
7. Chen, J.F. and Wie, C.R., Submitted to J. Electron. Mater., Oct. 1988.Google Scholar
8. chen, J.F. and Wie, C.R., J. Electron. Mater., 17 501 (1988).CrossRefGoogle Scholar
9. Rossi, J.A., Wolfe, C.M., and Dimmock, J.O., Phys. Rev. Lett. 25, 1614 (1970).CrossRefGoogle Scholar
10. Briones, F., and Collins, D.M., J. Electron. Mater. 11, 847 (1982).CrossRefGoogle Scholar
11. Jacob, G., in Semi-Insulating III-V Materials, Second Conference, Evian, France, edited by Markram-Ebeid, Sherif (Shiva,B. Truck Nantwich, 1982), p. 2.Google Scholar
12. Nathan, M.I., and Burns, G. Phys. Rev. 129, 125 (1963).CrossRefGoogle Scholar
13. Abrahams, M.S., and Buiocchi, C.J., J. Appl. Phys. 36, 2855 (1965).CrossRefGoogle Scholar
14. Kressel, H., and Nelson, H., in Physics of Thin Films, Vol.7, P.135 (1973) (edited by Hass, G., Francombe, M.H. and Hoffman, R.W.) Academic press publishing, New York and London.Google Scholar