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X-Ray Diffuse Scattering Study of Vacancy and Interstitial Loops in ion-Irradiated Copper*

Published online by Cambridge University Press:  28 February 2011

H. Maetat
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
B. C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
T. P. Sjoreen
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. K. Thomas
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
O. S. Oen
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. D. Lewis
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Interstitial and vacancy loops in ion-irradiated copper have been studied through the use of x-ray diffuse scattering in the “Asymptotic” scattering region near the (111) reflection. Diffuse scattering measurements were made on copper single crystals irradiated at room temperature with He, O, and Si ions, and the results have been analyzed in terms of size distributions of interstitial and vacancy dislocation loops. The measurements were made in an “off-symmetry” direction (along the Ewald Sphere) using a single angular setting of a linear position sensitive detector. The He ion-irradiation was found to produce mainly interstitial loops while the 0 and Si irradiations produced both vacancy and interstitial loops.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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Footnotes

*

Research sponsored by The Division of Materials Science, U.S. Department of Energy, under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

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