Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:38:56.181Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

Published online by Cambridge University Press:  03 September 2012

W. R. Bennett ,
R. F. C. Farrow ,
S. S. P. Parkin  and
E. E. Marinero
W. R. Bennett
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
R. F. C. Farrow
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
S. S. P. Parkin
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
E. E. Marinero
Affiliation:
IBM Almaden Research Center, San Jose CA. A.P. Segmüller, IBM Thomas J. Watson Research Center, Yorktown Heights, NY.
Get access

Abstract

We report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 151: Symposium G – Growth, Characterization and Properties of Ultrathin Magnetic Films and Multilayers , 1989 , 277
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dionne, G.F.,Mater.Res.Bull. 6, 805 (1971).CrossRefGoogle Scholar
2. Andersen, O.K.,Madsen, J.,Poulsen, U.K.,Jepsen, O.,and Kollar, J.,Physica B + C 86–88,249 (1977).CrossRefGoogle Scholar
3. Coqblin, B..The Electronic Structure of Rare-Earth Metals and Alloys: The Magnetic Heavy Rare Earths (Academic, New York, 1977).Google Scholar
4. Pankratz, L.B., Thermodynamic Properties of Halides, Bulletin 674, United States Department of the Interior, Bureau of Mines.Google Scholar
5. Segmüller, A.,Noyan, I.,Speriosu, V.S.,Progress in Crystal Growth, (1988).Google Scholar
6. Ludeke, R. in “Thin Film Growth Techniques for Low-Dimensional Structures,” ed. by R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson, J.H. Neave,A.S. Arrot,Nato ASI Series B 163, 319 (1987).CrossRefGoogle Scholar
7. Kwo, J. in “Thin Film Gwowth Techniques for Low-Dimensional Structures,” ed. By R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson, J.H. Neave,A.S. Arrot,Nato ASI Series B 163, 337 (1987).CrossRefGoogle Scholar
8. Farrow, R.F.C.,Parkin, S.S.P.,Speriosu, V.S.,Seguüller, A.P., Paper presented at MRS Spring Meeting, 1989. Symposium G. Mat.Res.Soc.Symp.151 (1989).CrossRefGoogle Scholar