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X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

Published online by Cambridge University Press:  25 February 2011

G. L. Doll ,
J. A. Sell ,
A. Wims ,
C. A. Taylor  and
R. Clarke
G. L. Doll
Affiliation:
General Motors Research Laboratories, 30500 Mound Road, Warren, MI 48090
J. A. Sell
Affiliation:
General Motors Research Laboratories, 30500 Mound Road, Warren, MI 48090
A. Wims
Affiliation:
General Motors Research Laboratories, 30500 Mound Road, Warren, MI 48090
C. A. Taylor
Affiliation:
Physics Department, University of Michigan, Ann Arbor, MI 48109
R. Clarke
Affiliation:
Physics Department, University of Michigan, Ann Arbor, MI 48109
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Abstract

We report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 333
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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