Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:14:58.592Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Diffraction Studies of Low Temperature GaAs

Published online by Cambridge University Press:  15 February 2011

G. Kowaljki ,
M. Leszcjynski ,
A. Kurpiewski ,
M. Kaminska ,
T. Suski  and
E. R. Weber
G. Kowaljki
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
M. Leszcjynski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland
A. Kurpiewski
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
M. Kaminska
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
T. Suski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland
E. R. Weber
Affiliation:
Department of Materials Science, University of California, Berkeley, USA.
Get access

Abstract

GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) were studied in a novel purpose designed X-ray experiment. It combines X-ray double crystal rocking curve measurements with some elements usually found in optical setups like light illumination at liquid nitrogen temperatures applied to transfer EL2 type defects into metastable state. Ability to record such transfers with the X-ray experiment as well as large lattice relaxation accompanying this process is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 125
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Smith, F.W., Calawa, A.R., Chen, C.L., Manfra, M.J. and Mahoney, L.J., IEEE Electron Device Lett. EDL–9, 77(1988).Google Scholar
2.Kaminska, M., Liliental-Weber, Z., Weber, E.R., George, T., Kortright, J.B., Smith, F.W., Tsaur, B-Y., and Calawa, A.R., Appl. Phys. Lett. 54(19), 1881(1989).10.1063/1.101229Google Scholar
3.Smith, F.W., Chen, C.L., Turner, G.W., Finn, M.C., Mahoney, L.J., Manfra, M.J. and Calawa, A.R., IEEE Electron DeviceGoogle Scholar
4.Kurpiewski, A., Palczewska, M., Kaminska, M., Weber, E.R., Acta Phys. Pol. in pressGoogle Scholar
5.Kaminska, M., Weber, E.R., Yu, Kin Man, Leon, R., George, T., Smith, F.W., Calawa, A.R., in Semi-insulating III-V Materials, Toronto 1990, edited by Milnes, A.G. and Miner, C.J. (Adam Hilger, Bristol 1990) p.111.Google Scholar
6.Hill, M.J., Tanner, B.K., Halliwell, M.A.G. and Lyons, M.H., J.Appl.Cryst. 18, 446(1985).Google Scholar
7.Fewster, P.F. and Curling, C.J., J.Appl. Phys. 62(10), 4154(1987).Google Scholar
8.Authier, A., Gronkowski, J. and Malgrange, C., Acta Cryst. A45, 432(1989).10.1107/S010876738900139XGoogle Scholar
9.Kowalski, G. and Leszczynski, M., Appl. Phys. Lett. 59(20), 1(1991).Google Scholar
10.Leszczynski, M., Suski, T. and Kowalski, G., Semicond. Sci. Technol. 6, 59(1991).Google Scholar
11.Leszczynski, M. at all to be published.Google Scholar