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X-Ray Diffraction Analysis and Modeling of Strain Induced Thermal Cycling in a Thin Aluminum (011) Bicrystal Film

Published online by Cambridge University Press:  21 March 2011

D. E. Nowak
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853
O. Thomas
Affiliation:
on leave from TECSEN, Universite Aix-Marseille III
S. P. Baker
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853
E. A. Stach
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
K. Balzuweit
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Heteroepitaxial films of aluminum bicrystals grown on silicon provide a model system in which to study plasticity in polycrystalline metal thin films. For the bicrystal films, dislocations are confined to move on two different slip plane orientations because of the orientation of the crystals on the substrate. In-situ transmission electron microscopy (TEM) observations during thermal cycling have shown two threshold temperatures for dislocation motion on cooling. A simple model uses the resolved shear stress on the possible slip planes to explain the TEM observations. Mechanisms responsible for the dislocation behavior are studied in-situ during thermal cycling between room temperature and 450°C with x-ray diffraction. The strains are determined using a sin2(Ψ) analysis at each temperature. Direct comparisons are made between the TEM observations, the model and x-ray diffraction results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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