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X-RAY and Electron Diffraction Studies of AS-Deposited rfSputtered Thin Films of lrO2

Published online by Cambridge University Press:  15 February 2011

I. T. Penfold
Affiliation:
Department of Physics, University of Houston, Houston, TX 77204–5506
S. C. Moss
Affiliation:
Department of Physics, University of Houston, Houston, TX 77204–5506
J. Kulik
Affiliation:
Texas Center for Superconductivity, University of Houston, TX 77204–5932
K. G. Kreider
Affiliation:
Process Measurement Division, NIST, Gaithersburg, MD 20899.
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Abstract

Iridium oxide films produced by reactive sputtering (SIROFs) haveconsiderably higher densities than those made by other techniques such asthe anodic reaction at metal surfaces which contain pores and Microvoids. Ithas been previously reported that SIROFs deposited with substratetemperatures of 300K are amorphous. Here we report x-ray and electrondiffraction measurements on SIROFs deposited on Al2O3,Si, NaCI and MgO substrates at 40°C. The x-ray diffraction patterns, I(Q),show “diffuse” structure that extends to beyond Q(=4εsinθ/) =10Â−1. We show that it is possible to reproduce qualitativelythe main features of the diffraction pattern by convolving the crystallinerutile powder pattern with a Lorentzian profile. The width of this profileis compatible with that determined from the Scherrer equation althoughsignificant peak shifts and texture are observed. This analysis reveals thatas-deposited SIROFs are crystalline with particle sizes in the range 25À to35Å rather than amorphous (for which no crystalline model would beappropriate). The electron microdiffraction data are also consistent with acrystallite size of a few nm and high resolution TEM reveals lattice fringesfrom crystallites few nm in size. The peak shifts, however, remain to beexplained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Mclntyre, J. D. E., Peck, W. F. and Nakahara, S., J. Electrochem. Soc., 127, 1264 (1980).Google Scholar
2. Hackwood, S., Dayem, A. H. and Beni, G., Phys. Rev. B 26 471 (1982).Google Scholar
3. Hackwood, S., Schiavone, L. M., Dautremont-Smith, W. C. and Beni, G., J. Electrochem. Soc., 128, 2569 (1981).Google Scholar
4. Tarlov, M. J., Semancik, S. and Kreider, K. G., Sensors and Actuators, B1 293 (1990).Google Scholar
5. Kreider, K. G., Semencik, S. and Erickson, J. W. in Proc. 4th Int. Conf. Solid State Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2–5, 1987, 734.Google Scholar
6. Kreider, K. G., J. Vac. Technol., A4 626 (1986).Google Scholar
7. Swanson, H. E., Morris, M. C. and Evans, E. H., NBS Monograph 25, Sec 4, 19 (1965).Google Scholar