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X-Ray Absorption Fine Structure (Xafs) Studies Of Cobalt Silicide Thin Films

Published online by Cambridge University Press:  10 February 2011

S. J. Naftel ,
I Coulthard ,
Y. Hu ,
T. K. Sham  and
M. Zinke-Allmang
S. J. Naftel
Affiliation:
Departments of Chemistry and Physics, University of Western Ontario, London, Canada
I Coulthard
Affiliation:
Departments of Chemistry and Physics, University of Western Ontario, London, Canada
Y. Hu
Affiliation:
Departments of Chemistry and Physics, University of Western Ontario, London, Canada
T. K. Sham
Affiliation:
Departments of Chemistry and Physics, University of Western Ontario, London, Canada
M. Zinke-Allmang
Affiliation:
Departments of Chemistry and Physics, University of Western Ontario, London, Canada
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Abstract

Cobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L2,3 and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi2 sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi2. Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 273
Copyright
Copyright © Materials Research Society 1998

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References

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