Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:49:35.042Z Has data issue: false hasContentIssue false

X-ray Absorption and Reflection as Probes of the GaN Conduction Bands: Theory and Experiment of the N-K-Edge and Ga M2,3, Edges

Published online by Cambridge University Press:  10 February 2011

W. R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106–7079
S. N. Rashkeev
Affiliation:
Permanent address: P. N. Lebedev Physical Institute, Russian Academy of Sciences, 117924 Moscow, Russia
B. Segall
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106–7079
K. Lawniczak-Jablonska
Affiliation:
Permanent address: Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland
T. Suski
Affiliation:
Permanent address: UNIPRESS, Polish Academy of Sciences, 01-142 Warszawa, Poland
E. M. Gullikson
Affiliation:
Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720
J. H. Underwood
Affiliation:
Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720
R. C. C. Perera
Affiliation:
Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720
J. C. Rife
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375
Get access

Abstract

X-ray absorption and glancing angle reflectivity measurements in the energy range of the Nitrogen K-edge and Gallium M2,3 edges are reported. Linear muffin-tin orbital band-structure and spectral function calculations are used to interpret the data. Polarization effects are evidenced for the N-K-edge spectra by comparing X-ray reflectivity in s- and p-polarized light.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lambrecht, W. R. L. and Segall, B., in Properties of Group III Nitrides, edited by Edgar, J. H., Electronic Materials Information Service (EMIS) Datareviews Series (Institution of Electrical Engineers, London 1994), Chapt. 4.Google Scholar
2. Lambrecht, W. R. L., Segall, B., Rife, J., Hunter, W. R., and Wickenden, D. K., Phys. Rev. B 51, 13516 (1995).Google Scholar
3. Lambrecht, W. R. L., Kim, K., Rashkeev, S. N., and Segall, B., in Gallium Nitride and Related Materials, edited by Dupuis, R. D., Ponce, F., Nakamura, S., and Edmond, J. A., Mater. Res. Soc. Symp. Proc. Vol. 395, (MRS, Pittsburgh 1996) p. 455Google Scholar
4. Petalas, J., Logothetidis, S., Boutadakis, S., Alouani, M., and Wills, J. M., Phys. Rev. B 52, 8082 (1995); S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Phys. Rev. B 50, 18017 (1994); C. Janowitz, M. Cardona, R. L. Johnson, T. Cheng, T. Foxon, O. Giinther, and G. Jungk, BESSY Jahresbericht (1994) p. 230.Google Scholar
5. Lambrecht, W. R. L., Rashkeev, S. N., Segall, B., Lawniczak-Jablonska, K., Suski, T., Gullikson, E. M., Underwood, J. H., Perera, R. C. C., Rife, J. C., Grzegory, I., Porowski, S. and Wickenden, D. K., Phys. Rev. B 54, (1996), to be published.Google Scholar
6. J.Underwood, H., Gullikson, M.K., Koike, M., P.Batson, J., P.Denham, E., Franck, K.D., Tackaberry, R.E., and Steele, W.F., Rev. Sci. Instrum., in press.Google Scholar
7. Rife, J. C., Sadeghi, H. R., and Hunter, W. R., Rev. Sci. lustrum. 60, 2064 (1989).Google Scholar
8. Hunter, W. R. and Rife, J. C., Nucl. Instrum. Meth. A246, 465 (1986).Google Scholar
9. Veal, B. W. and Paulikas, A. P., Phys. Rev. B 10, 1280 (1974).Google Scholar
10. Roessler, D. M., Brit. J. Appl. Phys. 16, 1359 (1965).Google Scholar
11. Hohenberg, P. and Kohn, W., Phys. Rev. 136, B864 (1964); W. Kohn and L. J. Sham, ibid. 140, A1133 (1965).Google Scholar
12. Andersen, O. K., Jepsen, O., and Sob, M., in Electronic Band Structure and its Applications, edited by Yussouff, M., (Springer, Heidelberg, 1987), p.1.Google Scholar
13. Jackson, J. D., Classical Electrodynamics, Second Edition, (John Wiley & Sons, New York 1975), Chapter 7.Google Scholar
14. Martin, G., Strite, S., Botchkarev, A., Agarwal, A., Rockett, A., Morkoc, H., Lambrecht, W. R. L., and Segall, B., Appl. Phys. Lett. 65, 610 (1994).Google Scholar
15. Rubio, A., Corkill, J. L., Cohen, M. L., Shirley, E. L., and Louie, S. G., Phys. Rev. B 48, 11810 (1993).Google Scholar
16. Palummo, M., Reining, L., Godby, R. W., Bertoni, C. M., and Bornsen, N., Europhys. Lett., 26, 607 (1994); and in Proc. 21st Int. Conf. on the Physics of Semiconductors, Eds. Ping Jiang, Hou-Zhi Zheng (World Scientific Press, Singapore 1993), p. 89.Google Scholar
17. Katsikini, M., Paloura, E. C., Kalomiros, J., Bressler, P., and Moustakas, T., Proceedings of the 23rd International Conference on The Physics of Semiconductors, ed. by Scheffler, M. and Zimmermann, R. (World Scientific, Singapore 1996), p. 573.Google Scholar