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XPS Investigation of Ion Implanted PMMA

Published online by Cambridge University Press:  28 February 2011

R. Kallweit
Affiliation:
Forschungsinstitut der Deutschen Bundespost TELEKOM, Postfach 10 00 03, D-6100 Darmstadt, FRG
U. Roll
Affiliation:
Perkin-Elmer Physical Electronics Division, Bruckmannring 40, D-8042 Oberschleifiheim, FRG
H. Strack
Affiliation:
Technische Hochschule Darmstadt, SchloBgartenstr. 8, D-6100 Darmstadt, FRG
A. Pocker
Affiliation:
Forschungsinstitut der Deutschen Bundespost TELEKOM, Postfach 10 00 03, D-6100 Darmstadt, FRG
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Abstract

During ion bombardment, polymethylmethacrylate (PMMA) shows degassing of polymer components with a fluence and energy dependent contraction of the material, which leads to a material modification.

The ion beam induced chemical modification of the implanted layers was examined by means of X-ray photoelectron spectroscopy (XPS). The dependence of the chemical modification on beam current, ion fluence and ion energy was investigated for nitrogen implantations at energies ranging from 50 keV to 400 keV for ion fluences between 7×1013 / cm2 and 7×1015/cm2. Compared with the C-spectrum of virgin PMMA, the spectra of the implanted layers exhibited an increase of intensity of the 284.5 eV peak and the 286.4 eV peak. The ion beam induced modification led basically to generation of new C-o-groups. These generations show drastical changes in the dependence of the beam current and the ion fluence. Nevertheless, at a constant dose of 2×1014/cm2 the concentrations of the new groups did not indicate any energy dependence.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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