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Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

A. Kimura ,
C. Sasaoka ,
A. Sakai  and
A. Usui
A. Kimura
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, [email protected]
C. Sasaoka
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, [email protected]
A. Sakai
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
A. Usui
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, [email protected]
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Abstract

We investigated the growth conditions for enhancing epitaxial lateral overgrowth (ELO) of GaN stripes selectively grown by low-pressure metalorganic vapor phase epitaxy. The ELO was enhanced for GaN <1100> stripes and with a small trimethylgallium flow-rate. This tendency did not depend on mask materials. The cross-sectional shape of the GaN <1100> stripes was trapezoidal for SiO2 masks, and rectangular for silicon nitride (SiN2) masks in a certain growth condition. A low dislocation density in the ELO region was obtained not only for the SiO2 masks but also for the SiN2 masks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 119
Copyright
Copyright © Materials Research Society 1998

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