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Wide Bandgap Semiconductors for Cold Cathodes: A Theoretical Analysis

Published online by Cambridge University Press:  10 February 2011

Peter Lerner ,
P. H. Cutler  and
N. M. Miskovsky
Peter Lerner
Affiliation:
Penn State University, Department of Physics, University Park, PA 16802
P. H. Cutler
Affiliation:
Penn State University, Department of Physics, University Park, PA 16802
N. M. Miskovsky
Affiliation:
Penn State University, Department of Physics, University Park, PA 16802
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Abstract

In this paper we describe the field emission from wide band-gap semiconductor thin film electron sources as a three-step process. Internal field emission is the mechanism for electron injection at the metal-semiconductor cathode interface. Under an internal field, electrons injected into the conduction band can propagate quasi-ballistically through the thin semiconductor film. At the vacuum interface, they are field emitted across a PEA or NEA surface. Consistent with the electron injection mechanism we have done molecular dynamics simulations for GaN films with an initial energy distribution corresponding to a Fowler-Nordheim (FN) spectrum. Results demonstrate quasi-ballistic propagation and approximate preservation of the FN energy distribution. Furthermore, high levels of n-doping in GaN (∼ 1017cm−3) do not inhibit transport in thin films (<0.1 μm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1109
Copyright
Copyright © Materials Research Society 1997

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References

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