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White-light Emitting ZnO-SiO2 Nanocomposite Thin Films Prepared by Sputtering Method

Published online by Cambridge University Press:  01 February 2011

Yu-Yun Peng
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, Hsinchu, Taiwan, ., 300, China, People's Republic of
Tsung-Eong Hsieh
Affiliation:
[email protected], National Chiao-Tung University, Materials Science and Engineering, Taiwan
Chia-Hung Hsu
Affiliation:
[email protected], National Synchrotron Radiation Research Center, Research Division, Taiwan
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Abstract

ZnO-SiO2 nanocomposite thin films were prepared using RF sputtering method without substrate heating. The photoluminance (PL) measurements showed that the ZnO-SiO2 nanocomposite thin films are able to emit white light consisting of violet, blue, and green-yellow band emissions. The blue emission was attributed to the large amount of ZnO/SiO2 interfaces, which enlarges the depletion layer width and then enhances the related transition. Further analyses indicated that the defect structure of samples could be manipulated by the amount and distribution of ZnO nanoparticles in SiO2 matrix to yield distinct luminescence property.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Vanheusden, K., Warren, W.L., Seager, C.H., Tallant, D.R. and Voigt, J.A., J. Appl. Phys., 79, 7983 (1996).10.1063/1.362349Google Scholar
2. Dijken, V., Meulenkamp, E.A., Vanmaekelbergh, D. and Meijerink, A., J. Luminescence, 87–89, 454 (2000).10.1016/S0022-2313(99)00482-2Google Scholar
3. Jing, L., Xu, Z., Shang, J., Sun, X., Cai, W. and Guo, H., Materials Science and Engineering, A332, 356 (2002).10.1016/S0921-5093(01)01801-9Google Scholar
4. Wu, X.L., Siu, G.G., Fu, C.L. and Ong, H.C., Appl. Phys. Lett., 78(6), 2285 (2001).10.1063/1.1361288Google Scholar
5. Lima, S.A.M., Sigoli, F.A., Jafelicci, M. Jr and Davolos, M.R., Int. J. Inorg. Materials, 3, 749 (2001).10.1016/S1466-6049(01)00055-1Google Scholar
6. Teke, A.. Özgür, Ü., Doğan, S., Gu, Z. and Morkoç, H., Phys. Rev., B70, 195207 (2004).10.1103/PhysRevB.70.195207Google Scholar