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What Limits Magnetic Polaron Energies in DMS?

Published online by Cambridge University Press:  26 February 2011

P. A. Wolff
Affiliation:
Francis Bitter National Magnet Laboratory, MIT, Cambridge, MA 02139 USA
L. R. Ram-Mohan
Affiliation:
Worcester Polytechnic Institute, Worcester, MA 01609 USA
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Extract

Magnetic polarons are ferromagnetic spin clusters created by the exchange interaction of a carrier spin (electron or hole) with localized spins imbedded in a semiconductor lattice. They were first studied in magnetic semiconductors [1]; more recently, there have been extensive investigations [2] of polaron behavior in diluted magnetic semiconductors (DMS), such as Cd1−xMnxTe. DMS are favorable media for magnetic polaron studies because they have simple s-p bands and excellent optical properties. Two types of magnetic polarons have been identified in DMS - the bound magnetic polaron (BMP), whose carrier is localized by an impurity [3], and the free polaron (FP) consisting of a carrier trapped by its own, self-consistently-maintained, exchange potential [4].

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

1 See Nagaev, E., Physics of Magnetic Semiconductors (MIR Publishers, Moscow, 1983).Google Scholar
2 Wolff, P. and Warnock, J., J. Appl. Phys. 55, 2300 (1984).Google Scholar
3 Golnik, A., Gaj, J., Nawrocki, M., PlaneT, R., and Guillaume, C. Benoit a la, Proc. XV Intl. Conf. Phys. Semiconductors, Kyoto, 1980 (J. Phys. Soc. Japan, Suppl. A49, pg. 819); M. Nawrocki, R. Planel, G. Fishman, and R. Galazka, Proc. XV Intl. Conf. Phys. Semiconductors, Kyoto, 1980 (J. Phys. Soc. Japan, Suppl. A49, pg. 819), pg. 823.Google Scholar
4 Golnik, A., Ginter, J., and Gaj, J., J. Phys. C16, 6073 (1983).Google Scholar
5 Dietl, T. and Spalek, J., Phys. Rev. Letters 48, 355 (1982); T. Dietl and J. Spalek, Phys. Rev. B28. 1548 (1983); D. Heiman, P. Wolff, and J. Warnock, Phys. Rev. B27, 4848 (1983).Google Scholar
6 Zhung, T. and Planel, R., Proc. XVI Intl. Conf. Phys. of Semiconductors, Montpellier, Physica 117B – 118B, 488 (1980).Google Scholar
7 Kasuya, T., Yanase, A., and Takeda, T., Sol. State Comm. 8, 1543 (1970).Google Scholar
8 Heiman, D., Isaacs, E.D., Becla, P., and Foner, S. (to be published); D. Heiman, E.D. Isaacs, S. Foner, A. Wold, K. Dwight, and D. Ridgely (to be published).Google Scholar
9 Zayhowski, J., Ph. D. Thesis, MIT, 1985.Google Scholar
10 Schafer, W. and Nitsche, R., Mat. Res. Bull. 9, 645 (1974).Google Scholar
11 Spalek, J., Phys. Rev. B30, 5345 (1984).Google Scholar