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Wet-Etch Patterning of Lead Zirconate Titanate (PZT) Thick Films for Microelectromechanical Systems (MEMS) Applications

Published online by Cambridge University Press:  17 March 2011

L.-P. Wang ,
R. Wolf ,
Q. Zhou ,
S. Trolier-McKinstry  and
R. J. Davis
L.-P. Wang
Affiliation:
The Penn State University, University Park, PA16802
R. Wolf
Affiliation:
The Penn State University, University Park, PA16802
Q. Zhou
Affiliation:
The Penn State University, University Park, PA16802
S. Trolier-McKinstry
Affiliation:
The Penn State University, University Park, PA16802
R. J. Davis
Affiliation:
Triquint Semiconductor, 13512 N. Central Expressway, Dallas, TX75243
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Abstract

Lead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two- step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45°C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6%, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1kV/cm, all similar to those of unpatterned films of the same thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 657: Symposia EE – Materials Science of Microelectromechanical Systems (MEMS) Devices III , 2000 , EE5.39
Copyright
Copyright © Materials Research Society 2001

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References

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