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Wet Chemical Etching Survey Of III-Nitrides

Published online by Cambridge University Press:  10 February 2011

Hyun Cho ,
D. C. Hays ,
C. B. Vartuli ,
S. J. Pearton ,
C. R. Abemathy ,
J. D. MacKenzie ,
F. Ren  and
J. C. Zolper
Hyun Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
D. C. Hays
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. R. Abemathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. D. MacKenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
J. C. Zolper
Affiliation:
Office of Naval Research, Arlington, VA 22217
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Abstract

Wet chemical etching of GaN, InN, AIN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AIN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75°C, or HCl/H2O at 25°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 265
Copyright
Copyright © Materials Research Society 1998

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