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Wet And Dry Oxidation of Polycrystalline SixGe1-x Films

Published online by Cambridge University Press:  10 February 2011

P.-E. Hellberg ,
S.-L. Zhang ,
F. M. d'Heurle  and
C. S. Petersson
P.-E. Hellberg
Affiliation:
Royal Institute of Technology, Department of Electronics, S- 164 40 Kista, Stockholm, Sweden
S.-L. Zhang
Affiliation:
Royal Institute of Technology, Department of Electronics, S- 164 40 Kista, Stockholm, Sweden
F. M. d'Heurle
Affiliation:
Royal Institute of Technology, Department of Electronics, S- 164 40 Kista, Stockholm, Sweden Also with IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA
C. S. Petersson
Affiliation:
Royal Institute of Technology, Department of Electronics, S- 164 40 Kista, Stockholm, Sweden
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Abstract

Wet and dry oxidations of polycrystalline SixGe1-x, with various compositions have been studied at different temperatures. The growth rate of SiO2 is found to be enhanced by Ge, and the enhancement effect is more pronounced in H2O than in O2. A mathematical model, which assumes simultaneous oxidation of Si and Ge and reduction of GeO2 by free Si available at the growing-oxide/SixGe1-x interface, is found to give a quantitative description of the SiO2 growth during thermal oxidation of SixGe1-x. Kinetic parameters are extracted by comparing the model with experiments. The linear and parabolic rate constants for Si oxidation are determined on control Si (100) wafers and polycrystalline Si films. Simple expressions are used for the interdiffusion of Si and Ge in SixGe1-x. For wet oxidation, the activation energy for the reaction rate constant of Ge oxidation is found to be smaller than that of Si oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 111
Copyright
Copyright © Materials Research Society 1998

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References

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