Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-23T11:29:32.870Z Has data issue: false hasContentIssue false

Well-Aligned In-situ Formed Open-End Carbon Nanotube for Device and Assembly Applications

Published online by Cambridge University Press:  26 February 2011

Lingbo Zhu
Affiliation:
[email protected], Georgia Institute of Technology, Atlanta, GA, 30332-0245, United States
ChingPing Wong
Affiliation:
[email protected], Georgia Institute of Technology, Atlanta, GA, 30332, United States
Get access

Abstract

Carbon nanotubes (CNTs) have been proposed for applications in microelectronic applications, especially for electrical interconnects, thermal management, and nanodevices, due to their excellent electrical, thermal, and mechanical properties. In this paper, we reported a simple process to achieve simultaneous CNT growth and opening of the CNT ends, while keeping alignment of the original CNT films/arrays. The addition of relatively low reactivity oxidizing agents (water) into the reaction furnace enables the feasibility. We proposed using novel CNT transfer technology, enabled by open-ended CNTs, to circumvent the high carbon nanotube (CNT) growth temperature and poor adhesion with the substrates that currently plague CNT implementation. The process is featured with separation of high-temperature CNT growth and low-temperature CNT device assembly. Field emission testing of the as-assembled CNT devices is in a good agreement with the Fowler-Nordheim (FN) equation, with a field enhancement factor of 4540.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dai, H.J., Kong, J., et al., J. Phys. Chem. B 103, 11246 (1999).Google Scholar
2. Hamada, N., Sawada, S. I., and Oshiyama, A., Phys. Rev. Lett. 68, 1579 (1992).Google Scholar
3. Saito, R., Fujita, M., Dresselhaus, G., and Dresselhaus, M. S., Appl. Phys. Lett. 60, 2204 (1992).Google Scholar
4. Hoenlein, W., Kreupl, F., et al., IEEE T. Compon. Pack. T. 27, 629 (2004).Google Scholar
5. Frank, S., Poncharal, P., Wang, Z. L., and de Heer, W. A., Science 280, 1744 (1998).Google Scholar
6. Graham, A. P., Duesberg, G. S., et al, Diam. Relat. Mater. 13, 1296 (2004).Google Scholar
7. Kreupl, F., Graham, A. P., et al., Microelectron. Eng. 64, 399 (2002).Google Scholar
8. Homma, Y., Yamashita, T., Kobayashi, Y., et al., “Interconnection of Nanostructures Using Carbon Nanotubes”, Physica B 323, 122123 (2002).Google Scholar
9. Li, H. J., Lu, W. G., Li, J. J., Bai, X. D., and Gu, C. Z., Phys. Rev. Lett. 95, 086601–1 (2005).Google Scholar
10. Zhu, L., Xiu, Y., Hess, D. W., Wong, C. P., Nano Lett. 5, 22641 (2005).Google Scholar
11. Wong, C. P., et al., US Patent (pending).Google Scholar
12. Yu, W. J., et al, Nanotechnol. 16, S291 (2005).Google Scholar
13. Bonard, J. M., et al., Phys. Rev. B 67, 115406 (2003).Google Scholar
14. Lee, O. J., and Lee, K. H., Appl. Phys. Lett. 82, 3770 (2003).Google Scholar