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Wafer Bonded Ge-Si Heterostructure for Avalanche Photodiode Application

Published online by Cambridge University Press:  20 July 2011

Ki Yeol Byun ,
John Hayes ,
Farzan Gity ,
Brian Corbett  and
Cindy Colinge
Ki Yeol Byun
Affiliation:
Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
John Hayes
Affiliation:
Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
Farzan Gity
Affiliation:
Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
Brian Corbett
Affiliation:
Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
Cindy Colinge
Affiliation:
Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
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Abstract

In this study, we investigate directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon integration for Avalanche photodiode application. Angle resolved x-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the surface passivation. The hetero-structure is characterized by measuring forward and reverse current and comparing the measured results to TCAD simulation. The physical structure of hetero-junction is supported by high resolution transmission electron microscopy.

Keywords

GeSibonding
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1336: Symposium P – Interface Engineering for Post-CMOS Emerging Channel Materials , 2011 , mrss11-1336-p07-10
Copyright
Copyright © Materials Research Society 2011

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References

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