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VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates

Published online by Cambridge University Press:  25 February 2011

Matty R. Caymax ,
J. Poortmans ,
A. Van Ammel ,
J. Nus ,
W. Vandervorst ,
J. Vanhellemont  and
B. Brus
Matty R. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Van Ammel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Nus
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
B. Brus
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

By Pulsed Gas CVD-growth, heteroepitaxial growth of pure Ge-layers from pure GeH4 has been accomplished at 650 °C on Si-substrates without intermediate Si1−xGex-bufferlayers. The material has been studied by means of RBS, SEM, ECP, XRD and cross-sectional, highresolution and plan-view TEM. The thickness of the Ge-layers varied between 2 and 24 monolayers. From 5 monolayers on, some part of the Ge appears to be fully relaxed. Uptill 12 monolayers, the growth is fully 2-dimensional and results in specular, flat surfaces; for thicker layers islanding starts (Stranski-Krastanow growth). The material is completely defect-free. According to XRD-measurements, the perpendicular strained Ge-cell dimension is 5.748 Å, which is very reproducible for all layer-thicknesses. Nevertheless, from linear elastic theory considerations, it should be 5.83 Å. The Ge-layers so formed appear to be suitable for use in short-period (SinGem)p-superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 85
Copyright
Copyright © Materials Research Society 1992

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