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Visible-Light Amorphous Silicon-Nitride Thin Film Light Emitting Diode

Published online by Cambridge University Press:  01 January 1993

Wirote Boonkosum ,
Dusit Kruangam  and
Somsak Panyakeow
Somsak Panyakeow
Affiliation:
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
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Abstract

A visible-light Thin Film Light Emitting Diode (TFLED) having a-SiN:H as a luminescent active layer has been developed. The TFLED has a structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. The emission color could be changed from red to orange, yellow, green and white-blue by varying the optical energy gap of the i a-SiN:H layer in the TFLED. The brightness was in the order of 0.1-1 cd/m2 . A series of systematic investigations on the basic properties of a-SiN:H films carrier injection and recombination mechanism in TFLEDs is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1005
Copyright
Copyright © Materials Research Society 1993

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References

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