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Visible Luminescence of Rare Earth Ions Doped Amorphous Zinc Oxide Thin Films Grown by Sputtering Technique

Published online by Cambridge University Press:  01 February 2011

Wojciech M. Jadwisienczak ,
Ajay S. Vemuru ,
Saima Khan ,
Aurangzeb Khan  and
Marty E. Kordesch
Wojciech M. Jadwisienczak
Affiliation:
[email protected], Ohio University, School of EECS, Stocker Center 351, Athens, OH, 45701, United States, 740-593-2067, 740-593-0007
Ajay S. Vemuru
Affiliation:
[email protected], Ohio Universtity, School of EECS, Athens, OH, 45701, United States
Saima Khan
Affiliation:
[email protected], Ohio University, Department of Physics, Athens, OH, 45701, United States
Aurangzeb Khan
Affiliation:
[email protected], Ohio University, Department of Physics, Athens, OH, 45701, United States
Marty E. Kordesch
Affiliation:
[email protected], Ohio University, Department of Physics, Athens, OH, 45701, United States
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Abstract

We report on the luminescence of rare earth (RE) (Sm, Er, Tm) ions doped ZnO films grown by the rf-magnetron sputtering technique. Samples were insitu doped with Sm ion or with Sm, Er, and Tm ions simultaneously without any intentional co-dopants and deposited on c-Si or quartz substrates at low temperatures. Selected ZnO:RE samples were thermally annealed in 200ºC-1000ºC temperature range in oxygen or argon gas at ambient pressure. As-grown and annealed samples were amorphous (a-ZnO) as was confirmed by the X-ray analysis. Furthermore, a-ZnO:RE samples were investigated by energy diffraction, photoluminescence and cathodoluminescence. In general, CL spectra of as-grown RE-doped a-ZnO films show characteristic emission lines due to 4f-shell transitions of RE3+ ions. Optical excitation of as-grown a-ZnO doped with RE ions using above the bandgap excitation resulted in strong host emission overlapped with weak RE3+ emission bands. It was observed that a thermal annealing process promotes changes of RE ions' environments resulting in significant 4f-shell transition luminescence intensity quenching.

Keywords

amorphousluminescencedopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L11-19
Copyright
Copyright © Materials Research Society 2008

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References

1. Reynolds, D. C., Look, D. C., and Jogai, B., Solid State Comm. 99, 873 (1996).Google Scholar
2. Bachir, S., Azuma, K., Kossanyi, J., Valat, P., and Ronfard-Haret, J. C., J. Lumin. 75, 35, (1997) and references therein.10.1016/S0022-2313(97)00093-8Google Scholar
3. Park, Y.-K., Han, J.-I., Kwak, M. –G., Yang, H., Hu, S.-H. et al. ., Appl. Phys. Lett. 72, 668, (1998).Google Scholar
4. Jadwisienczak, W., Lozykowski, H., Xu, A., Patel, B., J. Electr. Mater. 31, 776, (2002).10.1007/s11664-002-0235-zGoogle Scholar
5. Monteiro, T., Soares, M., Neves, A., Pereira, S. et al. J. Non-Cryst. Solids, 352, 1453 (2006).Google Scholar
6. Ishizumi, A., and Kanemitsu, Y., Appl. Phys. Lett. 86, 253106, (2005).10.1063/1.1952576Google Scholar
7. Ichida, M., Wada, T., Kachi, M., Sakamoto, W., Yogo, T. et al. ., phys. Stat. sol. (c), 10, 3569 (2006).10.1002/pssc.200672121Google Scholar
8. Sun, Y., Chen, Y., Tian, L., Yu, Y., Kong, X., Zeng, Q., Zhang, Y. et al. , J. Lumin. 128, 15 (2008).Google Scholar
9. Khoshman, J., Kordesch, M., Thin Solid Films 515, 7393 (2007).Google Scholar
10. Jadwisienczak, W., Lozykowski, H., Berishev, I. and Bensaoula, A., Brown, I., J. Appl. Phys., 89, 4384 (2001).Google Scholar
11. Zanatta, A., A Khan and Kordesch, M., J. Phys.: Condens. Matter 19, 436230 (2007).Google Scholar
12. Gurumurugan, K., Chen, H., Harp, G., Jadwisienczak, W., Lozykowski, H., Appl. Phys. Lett., 74, 3008 (1999).10.1063/1.123995Google Scholar
13. Lozykowski, H. and Jadwisienczak, W., phys. stat. sol. (b) 244, 2109 (2007).Google Scholar
14. Charge transport in disordered solids with applications in electronics, ed. Chichester, S. Baranovski, England; Hoboken, NJ, Wiley (2006).Google Scholar
15. Aldabergenova, S., Frank, G., Strunk, H., Maqbool, M., Richardson, H., Kordesch, M., J. of Non-Crystalline Solids 352, 1290 (2006).10.1016/j.jnoncrysol.2005.11.120Google Scholar
16. Bachir, S., Azuma, K., Kossanyi, J., Valat, P., Ronfard-Haret, J. C., J. Lumin. 75, 35, (1997).10.1016/S0022-2313(97)00093-8Google Scholar