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Virtual Fabrication of Small Ga-As/P and In-As/P Clusters with Pre-Designed Electronic Pattern Structure

Published online by Cambridge University Press:  26 February 2011

Liudmila A. Pozhar
Affiliation:
Western Kentucky University, Department of Chemistry, TCCW 444, 1 Big Red Way, Bowling Green, KY 42101, U.S.A.
Alan T. Yeates
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Polymer Materials Branch (AFRL/MLBP), 2941. Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
Frank Szmulowicz
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Sensor Materials Branch (AFRL/MLPS), 3005. Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
William C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Sensor Materials Branch (AFRL/MLPS), 3005. Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
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Abstract

Quantum statistical physics methods [1] relate charge transport properties of small atomic clusters (or small quantum dots, QDs) to their equilibrium electronic energy level spectra. Thus, electronic energy level computations for such systems provide a foundation for realization of a virtual (i.e., fundamental theory- based, computational) approach [2] to synthesis of sub-nanoscale materials with pre-designed charge transport properties. In this publication the Hartee-Fock (HF) electronic energy level spectra of several pre-designed small clusters of Ga, As, In and P atoms are studied and compared to those of the corresponding clusters grown at spatially unrestricted conditions. Influence of clusters' growth conditions on formation and structure of their valence and conduction bands is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. See, for example, L.A. Pozhar, Charge Transport in Inhomogeneous Quantum Systems in Weak Electro-Magnetic Fields: Two-Time Green's Function Approach (2004, in press); L.A. Pozhar, Mat. Res. Soc. Proc, 789, N3.10 (2004), etc.Google Scholar
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