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A View of the Commercial Application of Ion Implantation for Silicon VLSI Manufacturing

Published online by Cambridge University Press:  22 February 2011

Michael I. Current
Michael I. Current*
Affiliation:
Applied Materials, 3050 Bowers Avenue, Santa Clara, CA 95054 USA
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Abstract

The development of ion implantation for doping of Si-IC devices is reviewed with a special focus on some of the commercial as well as technological factors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 297
Copyright
Copyright © Materials Research Society 1994

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References

References:

1 Bohr, N., “On the theory of the decrease of Velocity of Moving Electrified Particles on passing through Matter”, Phil Mag. 25 (1913) 10.Google Scholar
2 Heilbron, J.L. and Seidel, R.W., Lawrence and His Laboratory, University of California Press (1989).Google Scholar
3 Freeman, J.H., “Canal Rays to Ion Implantation: 1886-1986”, Radiation Effects 100(1986) 161–248.Google Scholar
4 Shockley, W., “Forming Semiconductive Devices by Ionic Bombardment” U.S. Patent # 2,787,564 (Filed Oct. 28, 1954; granted April 2, 1957).Google Scholar
5 Mayer, J.W.,Erikson, W.L., Davies, J.A., Ion Implantation in Semiconductors, Academic Press (1970).Google Scholar
6 Wilson, R.G., Brewer, G.R.. Ion Beams, with Applications to Ion Implantation, Wiley (1973).Google Scholar
7 Rose, P.H., Nucl. Instr. and Meth. B6 (1985) 1–8.Google Scholar
8 Current, M.I., Nucl. Instr. and Meth. B6 (1985) 9–15.Google Scholar
9 Dataquest, San Jose, CA.Google Scholar
10 Simonton, R., Sinclair, F., in Handbook of Ion Implantation Technology, ed. Ziegler, J.F., North-Holland (1992) 271–362.Google Scholar
11 Dance, D.L..in Contamination Control and Defect Reduction in Semiconductor Manufacturiny-I. ed.Schmidt, D.N., Electrochemical Society,Vol. 92–21 (1992) 175–185.Google Scholar
12 Current, M.I., Yamada, I., Cheung, N.W., Hemment, P.L.F., Reeson, K.J., in Handbook of Ion Implantation Technology, ed. Ziegler, J.F., North-Holland (1992)363–433.Google Scholar
13 El-Kareh, B., in Proc. of 2nd Inter. Workshop on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, eds. Subrahmanyan, R., Osburn, C., Rai-Choudhury, P., MCNC, North Carolina, March, 1993, pp 3–15. To appear in J. Vac. Sci. Tech. (1994).Google Scholar
14 Semiconductor Technology Workshop: Working Group Reports, Semiconductor Industry Association, San Jose, CA, USA (1993).Google Scholar
15 For a view of the development of ion implantation technology and processing for IC fabrication, see the proceedings of the conference on Ion Implantation Technology (IIT) published recently in Nucl. Instr. and Meth. 189 (1981), B6 (1985), B21 (1987), B37/38 (1989), B55 (1991), B74 (1993) and the tutorial reviews in Handbook of Ion Implantation Technology,ed.Ziegler, J.F.,North-Holland(1992).Google Scholar
16 Yamada, I., Surface and Coatings Technology, 51 (1992) 514–521.Google Scholar
17 Weiner, K.H., Cary, P.G., McCarthy, A.M., Sigmon, T.W., Microelectronic Engineering 20 (1993) 107–130.Google Scholar