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VHF-GD a-Si:H Films Prepared at Very Low Temperature

Published online by Cambridge University Press:  25 February 2011

Y. Ziegler ,
H. Curtins ,
J. Baumann  and
A. Shah
Y. Ziegler
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland, + 4138 24 60 00
H. Curtins
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland, + 4138 24 60 00
J. Baumann
Affiliation:
University of Konstanz, Jacob-Burckhardt-strasse 25–35, D-7750 Konstanz 1, Germany.
A. Shah
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland, + 4138 24 60 00
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Abstract

Structural, optical and electrical properties of a-Si:H films prepared with the VHF Glow Discharge system were studied as function of deposition temperature, particularly in the range below 100°C. Usually, this material has poor optoelectronic properties. The a-Si:H material discussed in this work shows a surprisingly low hydrogen content, a low dihydride to monohydride ratio, good optical and electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 81
Copyright
Copyright © Materials Research Society 1989

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References

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