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Vertically-Stacked InAs Islands Between GaAs Barriers Grown by Chemical Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Mark Miller ,
Søren Jeppesen ,
Kristina Georgsson ,
Bernhard Kowalski ,
Jan-Olle Malm ,
Mats-Erik Pistol  and
Lars Samuelson
Mark Miller
Affiliation:
Department of Solid State Physics and the Swedish Nanometer Structures Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
Søren Jeppesen
Affiliation:
Department of Solid State Physics and the Swedish Nanometer Structures Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
Bernhard Kowalski
Affiliation:
Department of Solid State Physics and the Swedish Nanometer Structures Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
Jan-Olle Malm
Affiliation:
National Center for HREM, Dept. of Inorganic Chemistry 2, Lund University, P.O. Box 124, S-221 00 Lund, Sweden
Mats-Erik Pistol
Affiliation:
Department of Solid State Physics and the Swedish Nanometer Structures Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
Lars Samuelson
Affiliation:
Department of Solid State Physics and the Swedish Nanometer Structures Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
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Abstract

We report vertically-aligned InAs islands separated by GaAs barriers thin enough for electronic coupling. Thinner barriers reduced the InAs critical-thickness for island formation. Transmission electron microscopy revealed well-aligned islands with all detected islands in complete stacks. Atomic force microscopy showed the top islands of uncapped stacks are fully formed. The photoluminescence peak was sharper and shifted to lower energy compared to a single-layer growth. We attribute this shift to island-to-island electronic coupling and to the smaller compressive strain in the center of the composite structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 117
Copyright
Copyright © Materials Research Society 1996

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