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Versatile Metal Oxide Nanowire Devices Achieved via Controlled Doping

Published online by Cambridge University Press:  01 February 2011

Eric Dattoli ,
Qing Wan  and
Wei Lu
Eric Dattoli
Affiliation:
[email protected], University of Michigan, Electrical Engineering and Computer Science, 1301 Beal Ave, Ann Arbor, MI, 48109, United States, 734-764-2547
Qing Wan
Affiliation:
[email protected], University of Michigan, Electrical Engineering and Computer Science, 1301 Beal Ave., Ann Arbor, MI, 48109, United States
Wei Lu
Affiliation:
[email protected], University of Michigan, Electrical Engineering and Computer Science, 1301 Beal Ave., Ann Arbor, MI, 48109, United States
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Abstract

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nanowires. Uniform device performance was obtained using an in situ doping method, with average field-effect mobilities exceeding 100 cm2/(V•s). Prototype fully-transparent TFT devices on glass substrates showed excellent performance metrics in terms of transconductance and on/off ratio. The combined advantages of SnO2 nanowires: namely a low cost growth process, high electron mobility, and optical transparency; make the system well suited for large-scale transparent electronics on low-temperature substrates.

Keywords

nanoscalesemiconductingelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1018: Symposium EE – Applications of Nanotubes and Nanowires , 2007 , 1018-EE11-06
Copyright
Copyright © Materials Research Society 2007

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