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Variable Temperature Measurement on Operating Pentacene-Based OTFT

Published online by Cambridge University Press:  01 February 2011

Hung-Keng Chen
Affiliation:
[email protected], National Nano Device Laboratories, Core Facility, No.26, Prosperity Road 1, Science-based Industrial Park,, Hsinchu, 30078, Taiwan
Po-Tsun Liu
Affiliation:
[email protected], National Chiao Tung University, Department of Photonics and Display Institute, Hsinchu, 30078, Taiwan
Ting-Chang Chang
Affiliation:
[email protected], National Sun Yat-Sen University, Department of Physics and Institute of Electro-Optical Engineering, Kaohsiung, 80424, Taiwan
S.-L. Shy
Affiliation:
[email protected], National Nano Device Laboratories, No.26, Prosperity Road 1, Science-based Industrial Park,, Hsinchu,, 30078, Taiwan
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Abstract

Variable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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