Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-05-04T16:30:25.695Z Has data issue: false hasContentIssue false
  • English
  • Français

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

J. Su ,
M. Gherasimova ,
G. Cui ,
J. Han ,
S. Lim ,
D. Ciuparu ,
L. Pfefferle ,
Y. He ,
A. V. Nurmikko  and
C. Broadbridge
...Show all authors
J. Su
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
M. Gherasimova
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
G. Cui
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
J. Han
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
S. Lim
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
D. Ciuparu
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
L. Pfefferle
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
Y. He
Affiliation:
Division of Engineering, Brown University, Providence, RI 02192
A. V. Nurmikko
Affiliation:
Division of Engineering, Brown University, Providence, RI 02192
C. Broadbridge
Affiliation:
Physics Department, Southern Connecticut State University, New Haven, CT 06515
A. Lehman
Affiliation:
Facility for Electron Microscopy, Trinity College, Hartford, CT 06106
T. Onuma
Affiliation:
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, and 21-COE, University of Tsukuba, 1–1–1 Tennodai, Tsukuba 305–8573, Japan
M. Kurimoto
Affiliation:
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, and 21-COE, University of Tsukuba, 1–1–1 Tennodai, Tsukuba 305–8573, Japan NICP, ERATO, Japan Science and Technology Agency, 4–1–8 Honcho, Kawaguchi 332–0012, Japan
S. F. Chichibu
Affiliation:
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, and 21-COE, University of Tsukuba, 1–1–1 Tennodai, Tsukuba 305–8573, Japan NICP, ERATO, Japan Science and Technology Agency, 4–1–8 Honcho, Kawaguchi 332–0012, Japan
Get access

Abstract

We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E12.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Wagner, R. S. in Whisker Technology, edited by Levitt, A. P., John Wiley & Sons, New York (1970).Google Scholar
2 Chen, C., Yeh, C., Chen, C., Yu, M., Liu, H., Wu, J., Chen, K., Chen, L., Peng, J., and Chen, Y, J. Am. Chem. Soc., 123, 2791 (2001).Google Scholar
3 Qian, F., Li, Y., Gradecak, S., Wang, D., Barrelet, C. J., and Lieber, C. M., Nano Lett. 4, 871 (2004).Google Scholar
4 Su, J., Cui, G., Gherasimova, M., Tsukamoto, H., Han, J., Ciuparu, D., Lim, S., Pfefferle, L., He, Y., Nurmikko, A.V., Broadbridge, C., and Lehman, A., Appl. Phys. Lett., accepted for publication.Google Scholar
5 Koukitu, A., Takahashi, N., Taki, T., and Seki, H., J. Cryst. Growth, 170, 306 (1997).Google Scholar
6 Yang, J. Y., Mehnert, C. P., and Wong, M. S., Angew. Chem. Int. Ed. 38, 56 (1999)Google Scholar
7 Northrup, J. E. and Neugebauer, J., Phys. Rev. B. 53, R10477 (1996).Google Scholar
8 Filippidis, L., Siegle, H., Hoffmann, A., Thomsen, C., Karch, K., and Bechstedt, F., phys. stat. sol. (b), 198, 621 (1996)Google Scholar
9 Liu, J., Meng, X., Jiang, Y., Lee, C., Bello, I., and Lee, S., Appl. Phys. Lett. 83, 4241 (2003)Google Scholar
10 After growth of GaN nanowires for 30 min, TMGa/TMAl was closed/opened for 1, 2, 4, 8, and 5 minutes, interleaved by 4 min growth of GaN with TMI flowing continuously.Google Scholar
11 Massalski, T. B., ed., Binary Alloy Phase Diagrams, ASM international, Materials Park (1990).Google Scholar
12 Dick, K. A., Deppert, K., Larsson, M. W., Martensson, T., Seifert, W., Wallenberg, L. R. and Samuelson, L., Nature Mat. 3, 380 (2004);Google Scholar
Wang, D., Qian, F., Yang, C., Zhong, Z. and Lieber, C. M., Nano Letters, 4, 871 (2004).Google Scholar
13 Northrup, J. E. and Neugebauer, J., Phys. Rev. B 53, R10477 (1996).Google Scholar